NUS5530MN ON Semiconductor, NUS5530MN Datasheet

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NUS5530MN

Manufacturer Part Number
NUS5530MN
Description
Integrated Power Mosfet With Pnp Low Vce Sat Switching Transistor
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
NUS5530MNR2G
Manufacturer:
ON Semiconductor
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Part Number:
NUS5530MNR2G
Manufacturer:
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NUS5530MN
Integrated Power MOSFET
with PNP Low V
Switching Transistor
board−space reduction by combining the 20 V P−Channel FET with a
PNP Silicon Low V
product provides higher efficiency and accuracy for battery powered
portable electronics.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size
MAXIMUM RATINGS FOR P−CHANNEL FET
(T
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Operating Junction and Storage
A
This integrated device represents a new level of safety and
Cellular and Cordless Telephones and PCMCIA Cards
Low R
Higher Efficiency Extending Battery Life
Logic Level Gate Drive (MOSFET)
Performance DFN Package
This is a Pb−Free Device
Power Management in Portable and Battery−Powered Products; i.e.,
(Cu area = 1.27 in sq [1 oz] including traces).
T
T
= 25°C unless otherwise noted)
(T
T
T
(Note 1)
(Note 1)
Temperature Range
A
A
A
A
= 25°C
= 85°C
J
= 25°C
= 85°C
= 150°C) (Note 1)
DS(on)
Rating
(MOSFET) and Low V
CE(sat)
switching transistor. This newly integrated
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
CE(sat)
CE(sat)
5 sec
−5.3
−3.8
−5.3
(Transistor)
2.5
1.3
−55 to +150
"12
"20
−20
Steady
State
−3.9
−2.8
−3.9
1.3
0.7
1
Unit
°C
W
V
V
A
A
A
†For information on tape and reel specifications,
NUS5530MNR2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 506AL
Device
(Note: Microdot may be in either location)
Emitter
DFN8
1
Base
Gate
1
2
3
4
ORDERING INFORMATION
N/C
A
Y
WW
G
http://onsemi.com
8
PIN ASSIGNMENT
8
7
6
5
(Bottom View)
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Top View)
(Pb−Free)
Package
Collector
DFN8
Drain
Publication Order Number:
MARKING DIAGRAM
1
3000/Tape & Reel
1
2
3
4
AYWW G
NUS5530MN/D
Shipping
5530
N/C
Collector
Source
Drain
G
8
7
6
5

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NUS5530MN Summary of contents

Page 1

... View) ORDERING INFORMATION Device Package Shipping NUS5530MNR2G DFN8 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUS5530MN/D † ...

Page 2

MAXIMUM RATINGS FOR PNP TRANSISTORS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge THERMAL CHARACTERISTICS FOR P−CHANNEL FET Characteristic Maximum Junction−to−Ambient (Note sec Steady State Maximum Junction−to−Foot ...

Page 3

ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET Characteristic Static Gate Threshold Voltage Gate−Body Leakage Zero Gate Voltage Drain Current On−State Drain Current (Note 5) Drain−Source On−State Resistance (Note 5) Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) Dynamic (Note 6) Total ...

Page 4

ELECTRICAL CHARACTERISTICS FOR PNP TRANSISTORS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I C Collector −Base Breakdown Voltage (I = −0.1 mAdc Emitter −Base Breakdown Voltage (I = −0.1 mAdc Collector Cutoff Current (V = −35 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET 20 −5 V −3 −4.5 V − 0.5 1 1.5 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.2 0.15 0.1 0. ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET 1500 1200 900 C iss 600 C oss 300 C rss −V , DRAIN−TO−SOURCE VOLTAGE () DS Figure 6. Capacitance Variation 0.1 1 ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS FOR PNP TRANSISTOR 0 100 0.01 0.001 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 10. Collector Emitter Saturation Voltage versus Collector Current 500 125° 450 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS FOR PNP TRANSISTOR 225 200 175 150 125 100 5 COLLECTOR BASE VOLTAGE (V) CB Figure 16. Output Capacitance 1000 D = 0.50 100 D = 0.20 ...

Page 9

... DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering 0. details, please download the ON Semiconductor Soldering and 0.05 C NOTE 3 Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: ...

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