NSS1C200L ON Semiconductor, NSS1C200L Datasheet

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NSS1C200L

Manufacturer Part Number
NSS1C200L
Description
100 V, 2.0 A, Low Vce Sat Pnp Transistor
Manufacturer
ON Semiconductor
Datasheet
1.NSS1C200L.pdf (5 pages)

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NSS1C200MZ4
100 V, 2.0 A, Low V
PNP Transistor
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR-4 bd material
2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR-4 bd material
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 0
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Base Current - Continuous
Collector Current - Continuous
Collector Current
Total Power Dissipation
Operating and Storage Junction
Thermal Resistance,
Maximum Lead Temperature for
ON Semiconductor's e
Typical applications are DC-DC converters and power management
This is a Pb-Free Device
Total P
Total P
Temperature Range
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Soldering Purposes, 1/8″ from
case for 5 seconds
Characteristic
D
D
@ T
@ T
Rating
A
A
= 25°C (Note 1)
= 25°C (Note 2)
- Peak
CE(sat)
(T
C
= 25°C unless otherwise noted)
) and high current gain capability. These
2
PowerEdge family of low V
Symbol
Symbol
T
V
R
J
V
V
P
CEO
, T
T
I
I
qJA
CB
EB
C
B
D
L
stg
2
PowerEdge devices to be
CE(sat)
-55 to
-100
-140
+150
Max
-7.0
Max
155
260
1.0
2.0
3.0
2.0
0.8
64
1
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
CE(sat)
°C
°C
W
†For information on tape and reel specifications,
NSS1C200T1G
NSS1C200T3G
PNP LOW V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
-100 VOLTS, 2.0 AMPS
A
Y
W
1C200 = Specific Device Code
G
ORDERING INFORMATION
BASE
http://onsemi.com
PIN ASSIGNMENT
1
CASE 318E
Top View Pinout
SOT-223
= Assembly Location
= Year
= Work Week
= Pb-Free Package
STYLE 1
CE(sat)
B
COLLECTOR
1
EMITTER
(Pb-Free)
(Pb-Free)
SOT-223
SOT-223
Package
Publication Order Number:
C
4
C
2
3
2
TRANSISTOR
E
3
1
NSS1C200MZ4/D
MARKING
DIAGRAM
Tape & Reel
Tape & Reel
1C200G
Shipping
AYW
1000/
4000/
†

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NSS1C200L Summary of contents

Page 1

... NSS1C200MZ4 100 V, 2.0 A, Low V PNP Transistor 2 ON Semiconductor's e PowerEdge family of low V transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (I Collector - Base Breakdown Voltage (I C Emitter - Base Breakdown Voltage (I = -0.1 mAdc Collector Cutoff Current (V = -140 Vdc Emitter Cutoff ...

Page 3

I , COLLECTOR CURRENT (A) C Figure 2. DC Current Gain 0.1 150°C 25°C -55°C 0.01 0.001 0.01 0 ...

Page 4

1.0 0.8 -55°C 25°C 0.6 0.4 150°C 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 8. Base-Emitter Voltage 400 300 200 100 ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada   ...

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