NJL6202R-1 New Japan Radio Co.,Ltd, NJL6202R-1 Datasheet

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NJL6202R-1

Manufacturer Part Number
NJL6202R-1
Description
Njl6202r-1 High Speed Pin Photo Diode
Manufacturer
New Japan Radio Co.,Ltd
Datasheet
Ver.2005-01-20
GENERAL DESCRIPTION
FEATURES
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
ELECTRO-OPTICAL CHARACTERISTICS
• Short tail performance
• Fast rise-time/fall-time
• High speed
• Miniature, thin type
• Front laser power monitor for CD-R/RW, DVD+/-R/RW/-RAM, recordable MD
Reverse Voltage
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
The NJL6202R-1 is the high speed PIN photo-diode
that attained the short tail performance and the fast
response (tr/tf) required of the laser diode power
monitor of optical storage devices.
Dark Current
Forward Voltage
Capacitance
Peak Wavelength
Sensitivity
Rise time/Fall time
Cut off Frequency
3ns at1-99%, VR=2.5V,λ=780nm/650nm
300MHz at λ=780nm
350MHz at λ=650nm
1.8mmX3.6mmX1.16mm
etc.
PARAMETER
PARAMETER
SYMBOL
I
V
C
λ
S
tr/tf
D
fc
P
SYMBOL
F
t
HIGH SPEED PIN PHOTO DIODE
V
T
T
T
opr
stg
sol
R
(Ta=25°C)
V
I
V
V
V
V
V
V
V
F
R
R
R
R
R
R
R
R
=1mA
=10V
=2.5V, f=1MHz
=2.5V, λ=780nm
=2.5V, λ=650nm
=2.5V, λ=780nm, 1-99%
=2.5V, λ=650nm, 1-99%
=2.5V, λ=780nm, RL=50Ω, -3dB
=2.5V, λ=650nm, RL=50Ω, -3dB
(Ta=25°C)
TEST CONDITION
OUTLINE (typ.)
ACTIVE AREA
-40 to +100
anode
cathode
RATINGS
-30 to +85
260
35
1.8
±
0.15
Unit : mm
0.9
±
MIN
0.38
0.32
0.15
UNIT
°C
°C
°C
V
1.16
±
0.15
TYP
0.47
0.37
800
300
350
0.1
NJL6202R-1
4
3
3
0.5
Active area: 0.7X0.7mm
±
0.15
MAX
2.0
1.0
1.0
0.3
1.0
UNIT
MHz
MHz
A/W
A/W
nm
nA
pF
ns
ns
V
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NJL6202R-1 Summary of contents

Page 1

... GENERAL DESCRIPTION The NJL6202R-1 is the high speed PIN photo-diode that attained the short tail performance and the fast response (tr/tf) required of the laser diode power monitor of optical storage devices. FEATURES • Short tail performance • Fast rise-time/fall-time 3ns at1-99%, VR=2.5V,λ=780nm/650nm • High speed 300MHz at λ ...

Page 2

... NJL6202R-1 TYPICAL CHARACTERISTICS Light Current vs. Illuminance (Ta=25°C) 1.00E-03 VR=2.5V, λ=650nm 1.00E-04 1.00E-05 1.00E-06 1.00E-07 1.00E-08 0.01 0.1 1 Illuminance   (mW/cm Dark Current vs. Temperature 1.00E-08 VR=2.5V 1.00E-09 1.00E-10 1.00E-11 1.00E-12 1.00E-13 -40 - Ambient Temperature Ta( ℃ ) Rise Time vs. Reverse Voltage (Ta=25°C) 15 1-99%, λ=650nm, RL=50Ω Reverse Voltage   ...

Page 3

... Relative Sensitivity vs. Frequency (Ta=25° VR=2.5V, λ=650nm, RL=50Ω Frequency f(MHz) MEASURING CIRCUIT FOR RESPONSE TIME Pulse Generator Laser Ver.2005-01-20 Capacitance vs. Reverse Voltage (Ta=25°C) 100 1000 Oscilloscope 50Ω NJL6202R-1 NJL6202R Reverse Voltage VR(V) Input Output ...

Page 4

... NJL6202R-1 1. Soldering to actual circuit board Soldering condition - Heated condition of plastic package. Lower than 260 °C of maximum surface temperature Soldering Method 1) Reflow Method Recommended temperature profile of its method. Soldering to be done within twice under this condition. 260°C 230°C 220°C 180° ...

Page 5

... End of Rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only. 3) Taping quantity : 2,000 Pieces 4) Seal off after putting each reels in a dampproof bag with silica gel (3 bags). Ver.2005-01-20 NJL6202R-1 Taping Specification 4.0 φ 1.5 4.0 Carrier tape NJL6202R-1 0 ...

Page 6

... NJL6202R-1 MEMO - 6 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights ...

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