LMN1M EIC Semiconductor Incorporated, LMN1M Datasheet
LMN1M
Manufacturer Part Number
LMN1M
Description
Glass Passivated Junction Silicon Rectifier Diodes
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.LMN1M.pdf
(2 pages)
Rating at 25
For capacitive load, derate current by 20%.
Notes :
Page 1 of 2
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
LMN1A - LMN1M
* Glass passivated junction chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Reverse Recovery Time
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
(I
F
= 0.5 A, I
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Method 208 guaranteed
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
R
0.20 gram (approximately)
= 1.0 A, Irr = 0.25 A.)
RATING
F
= 1.0 Amp.
Ta = 100 °C
Ta = 25 °C
SYMBOL
V
V
I
R
T
V
I
I
F(AV)
Trr
FSM
V
R(H)
C
T
RRM
RMS
I
STG
ӨJA
DC
R
F
J
J
LMN1A LMN1B
50
35
50
GLASS PASSIVATED JUNCTION
SILICON RECTIFIER DIODES
Dimensions in inches and ( millimeters )
100
100
70
0.085(2.16)
0.075(1.91)
0.024(0.60)
0.022(0.55)
LMN1D LMN1G
200
140
200
TH97/10561QM
- 65 to + 175
- 65 to + 175
400
280
400
1.0
1.1
5.0
2.0
30
50
15
26
M1A
LMN1J
TW00/17276EM
600
420
600
Rev. 00 : January 21, 2008
0.138(3.51)
0.122(3.10)
1.00 (25.4)
1.00 (25.4)
MIN.
MIN.
LMN1K LMN1M
800
560
800
1000
1000
SGS TH07/1033
700
IATF 0060636
UNIT
°C/W
µA
µA
pF
°C
°C
µs
V
V
V
A
A
V
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LMN1M Summary of contents
Page 1
... LMN1A - LMN1M PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, ...
Page 2
... RATING AND CHARACTERISTIC CURVES ( LMN1A - LMN1M ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 0.8 0.6 0.4 0 100 AMBIENT TEMPERATURE, ( FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 1.0 Pulse Width = 300 μs 2% Duty Cycle 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE, (V) Page FIG.2 - MAXIMUM NON-REPETITIVE PEAK 125 150 ...