SQ221 Polyfet RF Devices, SQ221 Datasheet
SQ221
Manufacturer Part Number
SQ221
Description
Rf Power Transistor Vdmos
Manufacturer
Polyfet RF Devices
Datasheet
1.SQ221.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQ221
Manufacturer:
POLYFET
Quantity:
20 000
low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
General Description
SYMBOL
SYMBOL
"Polyfet"
Silicon VDMOS and LDMOS
VSWR
gM
Idss
Igss
Rdson
Idsat
Ciss
Gps
Crss
Coss
Vgs
η
Bvdss
Dissipation
30
Device
Watts
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
Total
TM
PARAMETER
PARAMETER
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Common Source Power Gain
Load Mismatch Tolerance
Zero Bias Drain Current
Gate Leakage Current
Saturation Current
Drain Efficiency
Gate Bias for Drain Current
Saturation Resistance
Drain Breakdown Voltage
Forward Transconductance
process features
t
Case Thermal
polyfet rf devices
6.00 C/W
Resistance
Junction to
o
Temperature
RF CHARACTERISTICS (
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
Maximum
ABSOLUTE MAXIMUM RATINGS ( T =
Junction
200
o
C
-65 C to 150 C
POLYFET RF DEVICES
Temperature
MIN
MIN
o
2
10
40
Storage
TYP
TYP
o
50
2.00
2.30
0.3
9.0
0.5
8.0
DC Drain
4.0
Current
MAX
MAX
20:1
1
5
0.2
0.8
WATTS OUTPUT )
SILICON GATE ENHANCEMENT MODE
A
UNITS TEST CONDITIONS
Relative
UNITS TEST CONDITIONS
Ohm
Mho
RF POWER
Amp
mA
dB
pF
pF
uA
pF
%
V
V
HIGH EFFICIENCY, LINEAR
25 C )
HIGH GAIN, LOW NOISE
Drain to
o
Voltage
Idq =
Idq =
Idq = 0.20
50
Gate
Ids =
ROHS COMPLIANT
V
Package Style
Ids =
Vds =
Vgs = 20V, Ids =
Vds =
Vds =
Vds =
Vds = 10V, Vgs = 5V
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
4.0
0.20
0.20
0.02
REVISION 06/04/2008
Watts
10.00
12.5
VDMOS
12.5
12.5
12.5
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Voltage
Source
50
Push - Pull
V
1.60
12.5
12.5
12.5
TRANSISTOR
AQ
A
V, F =
V, F =
V, F =
SQ221
Voltage
Gate to
Source
850
850
850
20
V
MHz
MHz
MHz
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SQ221 Summary of contents
Page 1
... Mho Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = Amp Vgs = 20V, Vds = 10V 12.5 Vgs = 0V MHz pF Vds = 12.5 Vgs = 0V MHz Vds = pF 12.5 Vgs = 0V MHz Vds = pF REVISION 06/04/2008 SQ221 TRANSISTOR AQ Gate to Source Voltage 12.5 850 MHz 12.5 850 MHz 12 850 MHz 1 ...
Page 2
... Pin in Wa tts IV CURVE S2C Die 1 IV CURVE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 VDS IN VOLTS vg=2v Vg=4v Vg=6v vg=8v Zin Zout 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com SQ221 1000 14.0 13.0 100 12.0 11.0 10 10.0 9.0 Gain 1 8.0 7.0 0.1 0.7 0.8 0 10.00 1.00 0.10 0. vg=10v vg=12v POLYFET RF DEVICES ...