SQD40N10-25 Vishay, SQD40N10-25 Datasheet
SQD40N10-25
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SQD40N10-25 Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD40N10-25 Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 100 V ± 136 175 °C LIMIT UNIT 50 ° ...
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... SQD40N10-25 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Document Number: 69064 S09-0965-Rev. A, 01-Jun- °C, unless otherwise noted A 100 0.05 0.04 25 °C 0.03 125 °C 0.02 0.01 0. iss 80 100 SQD40N10-25 Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQD40N10-25 Vishay Siliconix TYPICAL CHARACTERISTICS T 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature ( J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted A www.vishay.com °C, unless otherwise noted A 100 10 1 100 125 150 175 °C ) 100 Limited ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69064. Document Number: 69064 S09-0965-Rev. A, 01-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQD40N10-25 Vishay Siliconix www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...