SQR50N03 Vishay, SQR50N03 Datasheet
SQR50N03
Related parts for SQR50N03
SQR50N03 Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQR50N03-06P Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 30 V ± 100 101 8 175 °C LIMIT UNIT 50 °C/W 1 ...
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... SQR50N03-06P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.0150 °C C 0.0125 25 °C 0.0100 125 °C 0.0075 0.0050 0.0025 0.0000 SQR50N03-06P Vishay Siliconix 100 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQR50N03-06P Vishay Siliconix TYPICAL CHARACTERISTICS T 2 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted 100 T - Ambient Temperature (°C) A Maximum Drain Current vs. Ambient Temperature www.vishay.com ° ...
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... Document Number: 69061 S09-1413-Rev. A, 03-Aug- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient SQR50N03-06P Vishay Siliconix 10 100 1000 1 10 100 www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...