BPW76 Vishay, BPW76 Datasheet

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BPW76

Manufacturer Part Number
BPW76
Description
Silicon Npn Phototransistor
Manufacturer
Vishay
Datasheet

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Silicon NPN Phototransistor
Description
BPW76 is a high sensitive silicon NPN epitaxial pla-
nar phototransistor in a standard TO-18 hermetically
sealed metal case.
Its flat glass window makes it ideal for applications
with external optics.
A base terminal is available to enable biasing and
sensitivity control.
Features
Absolute Maximum Ratings
T
Document Number 81526
Rev. 1.3, 27-Nov-06
• Hermetically sealed case
• Flat window
• Very wide viewing angle ϕ = ± 40°
• Exact central chip alignment
• Long range light barrier with an additional optics
• Base terminal available
• High photo sensitivity
• Suitable for visible and near infrared radiation
• Selected into sensitivity groups
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
thermal resistance junction/
gase
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
t
T
t ≤ 5 s
p
amb
/T = 0.5, t
≤ 25 °C
Test condition
p
≤ 10 ms
e4
Applications
• Detector in electronic control and drive circuits
Symbol
V
V
V
R
R
T
P
I
T
CBO
CEO
EBO
CM
I
thJA
thJC
T
stg
C
tot
sd
j
- 55 to + 125
Vishay Semiconductors
Value
100
250
125
260
400
150
80
70
50
5
94 8401
BPW76
www.vishay.com
K/W
K/W
Unit
mW
mA
mA
°C
°C
°C
V
V
V
1

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BPW76 Summary of contents

Page 1

... Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial pla- nar phototransistor in a standard TO-18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sensitivity control. Features • Hermetically sealed case • ...

Page 2

... off = 100 Ω mA Test condition Part Symbol , λ = 950 nm, BPW76A 2 BPW76B 150 100 125 94 8343 Figure 2. Collector Dark Current vs. Ambient Temperature Min Typ. Max 70 1 100 6 Min Typ. Max ± 40 850 620 to 980 ...

Page 3

... Rev. 1.3, 27-Nov-06 94 8247 Figure 6. Collector Emitter Capacitance vs. Collector Emitter = 8253 Figure 7. Turn On/Turn Off Time vs. Collector Current 100 94 8348 Figure 8. Relative Spectral Sensitivity vs. Wavelength BPW76 Vishay Semiconductors MHz 100 0 Collector Ermitter Voltage (V) CE Voltage ...

Page 4

... BPW76 Vishay Semiconductors 0° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 94 8347 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement Package Dimensions in mm www.vishay.com 4 10° 20° 30° 40° 50° 60° 70° 80° 0.6 0.4 96 12175 Document Number 81526 Rev. 1.3, 27-Nov-06 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81526 Rev. 1.3, 27-Nov-06 and may do so without further notice. BPW76 Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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