APT17M120JCU2 Microsemi Corporation, APT17M120JCU2 Datasheet
APT17M120JCU2
Related parts for APT17M120JCU2
APT17M120JCU2 Summary of contents
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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT17M120JCU2 V = 1200V DSS R = 680mΩ typ @ Tj = 25°C DSon I = 17A @ Tc = 25°C D Application • ...
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... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT17M120JCU2 = 25°C unless otherwise specified j Test Conditions T = 25°C V =1200V 125°C ...
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... Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 0.0001 rectangular Pulse Duration (Seconds) APT17M120JCU2 W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) Cathode Source Dimensions in Millimeters and (Inches) Single P ulse 0.001 ...
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... DS T =25° =600V =960V 120 160 200 240 280 Gate Charge (nC) www.microsemi.com APT17M120JCU2 Low Voltage Output Characteristics 20 T =125° =6, 7,8 & Drain to Source Voltage (V) DS Transfert Characteristics 20 V > ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT17M120JCU2 Single Pulse 0.001 ...