APT33N90JCU3 Microsemi Corporation, APT33N90JCU3 Datasheet

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... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT33N90JCU3 V = 900V DSS R = 120mΩ max @ Tj = 25°C DSon I = 33A @ Tc = 25°C D Application • ...

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... V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APT33N90JCU3 = 25°C unless otherwise specified j Test Conditions V = 0V,V = 900V T = 25° 0V,V = 900V T = 125° ...

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... Switching Energy vs Current 4 V =600V DS R =7.5Ω =125°C J L=100µ Drain Current (A) D APT33N90JCU3 CoolMOS Diode W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) Anode Source Dimensions in Millimeters and (Inches) ON resistance vs Temperature 3.0 V =600V ...

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... Capacitance vs Drain to Source Voltage 100000 Ciss 10000 1000 Coss 100 10 Crss 100 125 150 175 200 V , Drain to Source Voltage (V) DS www.microsemi.com APT33N90JCU3 0.01 0.1 1 Breakdown Voltage vs Temperature 1000 975 950 925 900 100 T , Junction Temperature (° Drain Current vs Case Temperature ...

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... APT33N90JCU3 www.microsemi.com 5 – 6 ...

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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT33N90JCU3 Single Pulse 0.001 ...