APTC90TDUM60TPG Microsemi Corporation, APTC90TDUM60TPG Datasheet

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APTC90TDUM60TPG

Manufacturer Part Number
APTC90TDUM60TPG
Description
Triple Dual Common Source Super Junction Mosfet Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
R
V
V
E
E
I
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Triple dual Common Source
Super Junction MOSFET
S1/S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
D1
D2
Power Module
G1
S1
S2
G2
S3/S4
D3
D4
G3
S3
S4
G4
Parameter
S5/S6
D5
D6
G5
G6
S5
S6
www.microsemi.com
Application
Features
Benefits
V
R
I
APTC90TDUM60TPG
D
DSS
DSon
= 59A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Kelvin source for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
-
-
-
-
-
-
-
= 900V
= 60mΩ max @ Tj = 25°C
T
T
T
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
c
c
c
= 25°C
= 80°C
= 25°C
DSon
Max ratings
1940
900
150
±20
462
8.8
2.9
59
44
60
Unit
mJ
W
V
A
V
A
1 – 5

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APTC90TDUM60TPG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC90TDUM60TPG V = 900V DSS R = 60mΩ max @ Tj = 25°C DSon I = 59A @ Tc = 25°C D Application • ...

Page 2

... Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current I S (Body diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC90TDUM60TPG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 900V 125° 0V,V = 900V ...

Page 3

... T = 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP6-P Package outline See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC90TDUM60TPG To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ...

Page 4

... Drain to Source Voltage (V) DS Capacitance vs Drain to Source Voltage 100000 10000 1000 100 100 125 150 175 200 V , Drain to Source Voltage (V) DS APTC90TDUM60TPG Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Breakdown Voltage vs Temperature 1000 6V 975 950 5V 925 900 25 15 ...

Page 5

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC90TDUM60TPG 3.0 V ...

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