APTC90DSK12CT1G Microsemi Corporation, APTC90DSK12CT1G Datasheet

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APTC90DSK12CT1G

Manufacturer Part Number
APTC90DSK12CT1G
Description
Dual Buck Chopper Super Junction Mosfet Sic Chopper Diode
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
R
V
V
E
E
I
I
P
I
DSon
DM
AR
DSS
AR
AS
Super Junction MOSFET
D
GS
D
Dual buck chopper
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Pins 3/4 must be shorted together
SiC chopper diode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Parameter
www.microsemi.com
Application
Features
Benefits
V
R
I
D
APTC90DSK12CT1G
DSS
DSon
= 30A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
SiC Schottky Diode
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
= 900V
= 120mΩ max @ Tj = 25°C
T
T
T
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
c
c
c
= 25°C
= 80°C
= 25°C
DSon
Max ratings
1940
900
±20
120
250
8.8
2.9
30
23
75
Unit
mJ
W
V
A
V
A
1 – 6

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APTC90DSK12CT1G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC90DSK12CT1G V = 900V DSS R = 120mΩ max @ Tj = 25°C DSon I = 30A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F Q Total Capacitive Charge C C Total Capacitance APTC90DSK12CT1G = 25°C unless otherwise specified j Test Conditions V = 0V,V = 900V T = 25° 125° 0V,V = 900V GS ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTC90DSK12CT1G T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ...

Page 4

... I , Drain Current (A) D Switching Energy vs Current 2 V =600V DS R =7.5Ω =125°C J L=100µ Drain Current (A) D APTC90DSK12CT1G ON resistance vs Temperature 3.0 V =600V DS D=50% 2.5 R =7.5Ω =125°C J 2.0 T =75°C C 1.5 1.0 0.5 25 17 Switching Energy vs Gate Resistance 3 Eon ...

Page 5

... Capacitance vs Drain to Source Voltage 100000 Ciss 10000 1000 Coss 100 10 Crss 100 125 150 175 200 V , Drain to Source Voltage (V) DS www.microsemi.com APTC90DSK12CT1G 0.01 0.1 1 Breakdown Voltage vs Temperature 1000 975 950 925 900 100 T , Junction Temperature (° Drain Current vs Case Temperature ...

Page 6

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC90DSK12CT1G Single Pulse 0.001 ...

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