APTGF50X120TE3G Microsemi Corporation, APTGF50X120TE3G Datasheet
APTGF50X120TE3G
Manufacturer Part Number
APTGF50X120TE3G
Description
3 Phase Bridge - Igbt 3 Phase Bridge Npt Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
1.APTGF50X120TE3G.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF50X120TE3G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGF50X120TE3G
Quantity:
50
Absolute maximum ratings
SCSOA
Symbol
21
20
V
V
I
NPT IGBT Power Module
P
I
CM
CES
C
GE
D
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short Circuit Save Operating Area
1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3 Phase bridge
2
19
3 4
Parameter
5 6
18
7
8
APT website – http://www.advancedpower.com
17
9
10
11
16
12
15
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
13
14
Application
Features
Benefits
•
•
•
•
•
•
•
•
•
•
•
•
•
500A@1200V
Max ratings
AC Motor control
Non Punch Through (NPT) IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
1200
APTGF50X120TE3
150
400
-
-
-
-
-
-
-
-
78
50
20
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
CES
= 50A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
®
1 - 3
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APTGF50X120TE3G Summary of contents
Page 1
Phase bridge NPT IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current ...
Page 2
Electrical Characteristics Symbol Characteristic BV Collector - Emitter Breakdown Voltage CES I Zero Gate Voltage Collector Current CES V Collector Emitter on Voltage CE(on) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic ...
Page 3
Thermal and package characteristics Symbol Characteristic R Junction to Case thJC RMS Isolation Voltage, any terminal to case t =1 min, V ISOL I isol<1mA, 50/60Hz T Operating junction temperature range J T Storage Temperature Range STG T Operating Case ...