APT50GT120B2R Microsemi Corporation, APT50GT120B2R Datasheet
APT50GT120B2R
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APT50GT120B2R Summary of contents
Page 1
... 1200V 0V 25° 1200V 0V 125° ±20V) GE Microsemi Website - http://www.microsemi.com APT50GT120B2R(G) APT50GT120LR(G) 1200V, 50A 3.2V Typical CE(ON) = 25°C unless otherwise specifi ed. C Ratings Unit 1200 Volts ± Amps 150 150A @ 1200V 625 Watts -55 to 150 ° ...
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... Inductive Switching (25° 800V 15V 50A 4.7Ω +25° Inductive Switching (125° 800V 15V 50A 4.7Ω 125° APT50GT120B2R_LR(G) Min Typ Max - 3300 - - 500 - - 220 - - 10 340 - - 210 - , V = 15V, GE 150 - 230 - ...
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... FIGURE 6, On State Voltage vs Junction Temperature 100 100 125 150 25 FIGURE 8, DC Collector Current vs Case Temperature APT50GT120B2R_LR(G) 15V 13V 11V 10V COLLECTOR-TO-EMITTER VOLTAGE ( 25° 50A V ...
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... FIGURE 14, Turn-Off Energy Loss vs Collector Current 20,000 E 100A on2, 15,000 10,000 5,000 E 100A off, 50A off, E 25A on2, 25A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT50GT120B2R_LR(G) V =15V,T =125° =15V,T =25° 800V 1.0Ω 100μ ...
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... RECTANGULAR PULSE DURATION (SECONDS) 120 100 T (° 0.151 Figure 20, Operating Frequency vs Collector Current APT50GT120B2R_LR(G) 160 140 120 100 200 400 600 800 1000 1200 1400 V , COLLECTOR-TO-EMITTER VOLTAGE CE FIGURE 18, Minimum Switching Safe Operating Area ...
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... TO-264 Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 5.38 (.212) 6.20 (.244) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) Gate Collector Emitter 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Dimensions in Millimeters and (Inches) APT50GT120B2R_LR(G ) Gate Voltage T = 125°C J 90% t Collector Current 10% Collector Voltage Switching Energy 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6 ...