APTC90A12T1G Microsemi Corporation, APTC90A12T1G Datasheet
APTC90A12T1G
Related parts for APTC90A12T1G
APTC90A12T1G Summary of contents
Page 1
... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC90A12T1G V = 900V DSS R = 120mΩ max @ Tj = 25°C DSon I = 30A @ Tc = 25°C D Application • ...
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... Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current I S (Body diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC90A12T1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 900V 125° 0V,V = 900V ...
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... Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ⎥ ⎝ ⎠ ⎦ 25 www.microsemi.com APTC90A12T1G Min Typ Max Unit 0.50 °C/W 4000 V -40 150 °C -40 125 -40 100 M4 2.5 4.7 N Min Typ Max Unit 50 kΩ ...
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... Drain to Source Voltage (V) DS Capacitance vs Drain to Source Voltage 100000 10000 1000 100 100 125 150 175 200 V , Drain to Source Voltage (V) DS APTC90A12T1G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Breakdown Voltage vs Temperature 1000 6V 975 950 5V 925 900 25 15 ...
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... T =125°C J 2.0 T =75°C C 1.5 1.0 0 22.5 25 Switching Energy vs Gate Resistance 4 3 Eon 2 Eoff www.microsemi.com APTC90A12T1G ON resistance vs Temperature 50 75 100 125 150 T , Junction Temperature (°C) J Eon Eoff V =600V DS I =26A D T =125°C J L=100µ Gate Resistance (Ohms) ...