APTGF150A120T3AG Microsemi Corporation, APTGF150A120T3AG Datasheet
APTGF150A120T3AG
Related parts for APTGF150A120T3AG
APTGF150A120T3AG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150A120T3AG Application 13 • Welding converters • Switched Mode Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF150A120T3AG = 25°C unless otherwise specified j Test Conditions Min 1200V 25°C V =15V 150A T = 125° ...
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... K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF150A120T3AG IGBT Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.12 0.9 0.1 0.7 0.08 0.5 0.06 0.3 0.04 0.02 0.1 0.05 0 0.00001 0.0001 APTGF150A120T3AG =15V) GE 300 T J 250 200 150 100 T =125° (V) Energy losses vs Collector Current ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF150A120T3AG Forward Characteristic of diode 300 ...