APTGF125X60TE3G Microsemi Corporation, APTGF125X60TE3G Datasheet
APTGF125X60TE3G
Manufacturer Part Number
APTGF125X60TE3G
Description
3 Phase Bridge - Igbt 3 Phase Bridge Npt Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
1.APTGF125X60TE3G.pdf
(3 pages)
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Part Number:
APTGF125X60TE3G
Quantity:
50
Absolute maximum ratings
RBSOA
Symbol
21
20
V
V
NPT IGBT Power Module
I
P
I
CM
CES
C
GE
D
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1
3 Phase bridge
2
19
3 4
Parameter
5 6
18
7
8
APT website – http://www.advancedpower.com
17
9
10
11
16
12
15
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
13
14
Application
Features
Benefits
•
•
•
•
•
•
•
•
•
•
•
•
•
•
300A@480V
Max ratings
AC Motor control
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
APTGF125X60TE3
600
180
125
350
570
20
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
= 125A @ Tc = 80°C
= 600V
Unit
W
V
A
V
®
1 - 3
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APTGF125X60TE3G Summary of contents
Page 1
Phase bridge NPT IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current ...
Page 2
Electrical Characteristics Symbol Characteristic BV Collector - Emitter Breakdown Voltage CES I Zero Gate Voltage Collector Current CES V Collector Emitter on Voltage CE(on) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic ...
Page 3
Thermal and package characteristics Symbol Characteristic R Junction to Case thJC RMS Isolation Voltage, any terminal to case t =1 min, V ISOL I isol<1mA, 50/60Hz T Operating junction temperature range J T Storage Temperature Range STG T Operating Case ...