APTGF90A60T3AG Microsemi Corporation, APTGF90A60T3AG Datasheet - Page 2

• Manufacturer Part Number: APTGF90A60T3AG
• Description: Phase Leg Npt Igbt Power Module Power Module
• Manufacturer: Microsemi Corporation

Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
V
V
V
T
T
T
T
I
I
C
C
E
I
CE(sat)
Q
E
GE(th)
V
Q
CES
GES
T
d(off)
T
T
d(off)
T
I
d(on)
d(on)
RRM
RM
I
t
off
sc
rr
ies
res
on
F
G
f
f
F
rr
r
r
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
All ratings @ T
j
www.microsemi.com
= 25°C unless otherwise specified
V
R
Test Conditions
V
I
V
V
Test Conditions
V
f = 1MHz
V
I
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
V
V
I
V
t
Test Conditions
V
I
I
I
I
V
di/dt =400A/µs
p
C
C
C
C
C
F
F
F
F
G
GE
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
Bus
GE
≤ 10µs ; T
R
R
=100A
= 100A
= 100A
= 100A
= 60A
= 120A
= 60A
= 60A
= 100A
=600V
= 2.2Ω
= 2.2Ω
= 2.2Ω
= 400V
= 15V ; V
= 0V, V
=15V
= V
= 20V, V
= 0V ; V
= ±15V
= ±15V
= ±15V
≤15V ; V
= 300V
= 300V
= 300V
CE
, I
j
CE
= 125°C
CE
C
CE
APTGF90A60T3AG
CE
Bus
= 600V
= 1.5mA
= 25V
=300V
= 0V
= 360V
T
T
T
T
T
T
T
T
T
T
T
Tc = 100°C
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 125°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min
Min
Min
600
4.5
Typ
160
960
Typ
Typ
240
130
150
450
1.8
2.2
1.5
2.2
5.5
4.3
0.4
60
25
70
25
10
20
25
11
30
2
1
3
Max
Max
Max
600
250
400
2.2
2.5
6.5
35
Unit
Unit
Unit
µA
µA
nA
nC
nC
mJ
nF
ns
ns
ns
V
V
A
V
A
V
2 – 5