APT20M20LLL Advanced Crystal Technology, APT20M20LLL Datasheet
APT20M20LLL
Manufacturer Part Number
APT20M20LLL
Description
Power Generation Loss, High Voltage, N-channel Enhancement Mode Power Mosfets.
Manufacturer
Advanced Crystal Technology
Datasheet
1.APT20M20LLL.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT20M20LLL
Manufacturer:
APT
Quantity:
15 500
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
USA
EUROPE
Symbol
T
Symbol
R
V
BV
V
V
J
I
V
I
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
405 S.W. Columbia Street
Chemin de Magret
TM
is a new generation of low loss, high voltage, N-Channel
POWER MOS 7
TM
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
2
5
• Increased Power Dissipation
• Easier To Drive
• Popular
(V
DS
C
DS
APT Website - http://www.advancedpower.com
1
= V
C
= 25°C
> I
= 25°C
Bend, Oregon 97702-1035
F-33700 Merignac - France
4
GS
GS
D(on)
2
DS
DS
TM
, I
= ±30V, V
GS
D
(V
by significantly lowering R
= V
= 0.8 V
T-MAX™
x R
= 2.5mA)
= 0V, I
5
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250µA)
GS
Max, V
, V
= 0V)
TM
or TO-264 Package
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
= 125°C)
APT20M20B2LL
DS(ON)
APT20M20LLL
200V 100A 0.020
C
= 25°C unless otherwise specified.
MIN
200
100
3
G
B2LL
T-MAX™
APT20M20
-55 to 150
2500
4.56
TYP
200
100
400
±30
±40
570
300
100
50
D
S
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
0.020
±100
MAX
250
25
5
TO-264
LLL
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
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APT20M20LLL Summary of contents
Page 1
... T DS DSS GS = ±30V 0V 2.5mA APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France APT20M20B2LL APT20M20LLL 200V 100A 0.020 B2LL T-MAX™ TO-264 DS(ON 25°C unless otherwise specified. C APT20M20 200 100 400 ±30 ±40 570 4 ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...