APTC60DSKM45T1G Microsemi Corporation, APTC60DSKM45T1G Datasheet

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APTC60DSKM45T1G

Manufacturer Part Number
APTC60DSKM45T1G
Description
Dual Buck Chopper Super Junction Mosfet Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
R
V
V
E
E
I
Super Junction MOSFET
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
Dual Buck chopper
APT0502 on www.microsemi.com
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Pins 3/4 must be shorted together
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Power Module
Parameter
www.microsemi.com
Application
Features
Benefits
V
R
I
APTC60DSKM45T1G
D
DSS
DSon
= 49A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
Low profile
RoHS Compliant
-
-
-
-
-
-
= 600V
T
T
T
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
= 45mΩ max @ Tj = 25°C
Symmetrical design
c
c
c
= 25°C
= 80°C
= 25°C
DSon
Max ratings
1900
600
130
±20
250
49
38
45
15
3
Unit
mJ
W
V
A
V
A
1 – 7

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APTC60DSKM45T1G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC60DSKM45T1G V = 600V DSS R = 45mΩ max @ Tj = 25°C DSon I = 49A @ Tc = 25°C D Application • ...

Page 2

... V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC60DSKM45T1G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V GS DS ...

Page 3

... 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTC60DSKM45T1G Characteristic CoolMOS Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ...

Page 4

... Drain to Source Voltage ( (on) vs Drain Current DS 1.3 Normalized to 1.25 V =10V @ 50A GS 1.2 1.15 1.1 1.05 1 0.95 0 Drain Current (A) D APTC60DSKM45T1G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 140 V DS 120 6.5V 250µs pulse test @ < 0.5 duty cycle 6V 100 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Coss Ciss 10000 1000 Crss 100 Drain to Source Voltage (V) DS APTC60DSKM45T1G ON resistance vs Temperature 3.0 V =10V GS 2 50A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited by R ...

Page 6

... ZCS G 200 T =125° =75°C C 150 100 hard switching Drain Current (A) D www.microsemi.com APTC60DSKM45T1G Rise and Fall times vs Current 70 V =400V =5Ω =125° L=100µ ...

Page 7

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC60DSKM45T1G Single Pulse 0.001 ...

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