APTGF50VDA60T3G Microsemi Corporation, APTGF50VDA60T3G Datasheet

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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50VDA60T3G V I Application • AC and DC motor control • Switched Mode Power Supplies • ...

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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50VDA60T3G = 25°C unless otherwise specified j Test Conditions Min T = 25° 600V T = 125° 25° ...

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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50VDA60T3G T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ...

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... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGF50VDA60T3G =15V) Output Characteristics (V GE 100 250µs Pulse Test < 0.5% Duty cycle 75 T =125° Collector to Emitter Voltage ( 50A ...

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... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) www.microsemi.com APTGF50VDA60T3G Turn-Off Delay Time vs Collector Current 175 150 V =15V, GE 125 T =125°C J 100 V =15V =25° 400V 2.7Ω ...

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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50VDA60T3G Operating Frequency vs Collector Current 240 ...