MMB3904LT1 Leshan Radio Company Co., Ltd., MMB3904LT1 Datasheet

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MMB3904LT1

Manufacturer Part Number
MMB3904LT1
Description
General Purpose Transistor(NPN Silicon)
Manufacturer
Leshan Radio Company Co., Ltd.
Datasheet
1.MMB3904LT1.pdf (6 pages)
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%.
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
MMBT3904LT1 = 1AM
Collector–Emitter Breakdown Voltage(3)
(I
Collector–Base Breakdown Voltage
(I
Emitter–Base Breakdown Voltage
(I
Base Cutoff Current
( V
Collector Cutoff Current
( V
Total Device Dissipation FR– 5 Board, (1)
T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
A
C
C
E
= 25°C
= 1.0 mAdc, I
= 10 Adc, I
= 10 Adc, I
CE
CE
= 30 Vdc, V
= 30Vdc, I
Rating
Characteristic
Characteristic
E
C
B
= 0)
= 0)
EB
EB
= 0)
= 3.0Vdc )
= 3.0 Vdc, )
A
= 25°C
Symbol
V
V
V
I
CEO
CBO
EBO
C
(T
A
= 25°C unless otherwise noted.)
Value
200
1
BASE
6.0
40
60
Symbol
T
Symbol
V
V
V
J
R
R
P
P
, T
I
(BR)CEO
(BR)CBO
(BR)EBO
D
D
I
JA
JA
CEX
BL
stg
mAdc
Unit
Vdc
Vdc
Vdc
3
COLLECTOR
–55 to +150
2
EMITTER
Max
225
300
417
1.8
556
2.4
Min
6.0
40
60
—
—
LESHAN RADIO COMPANY, LTD.
mW/°C
mW/°C
°C/W
°C/W
Unit
mW
mW
°C
Max
50
50
—
—
—
MMBT3904LT1
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
2
3
O11–1/6

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MMB3904LT1 Summary of contents

Page 1

General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, ( 25°C A Derate above 25°C Thermal ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (3) DC Current Gain(1) (I =0.1 mAdc, V =1.0 Vdc 1.0 mAdc 1.0 Vdc mAdc 1.0 Vdc 50mAdc, ...

Page 3

DUTY CYCLE = 2% 300 ns +10 –0.5 V < Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5.0 C ...

Page 4

1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 5. Turn–On Time 500 300 I ...

Page 5

I , COLLECTOR CURRENT (mA) C Figure 11. Current Gain 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2 COLLECTOR CURRENT (mA) ...

Page 6

0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° BE(sat) 1.0 0.8 0.6 0 CE(sat) C 0.2 0 1.0 2.0 3.0 5 ...

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