MMBV3102(LT1) N/A, MMBV3102(LT1) Datasheet
MMBV3102(LT1)
Manufacturer Part Number
MMBV3102(LT1)
Description
Capacitance diode (Varactor, varicap)
Manufacturer
N/A
Datasheet
1.MMBV3102LT1.pdf
(2 pages)
Silicon Tuning Diode
general frequency controland tuning applications. It provides
solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
MAXIMUM RATINGS
Reverse Voltage
Forward Current
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV3102LT1= M4C
ELECTRICAL CHARACTERISTICS(T
Reverse Breakdown Voltage
(I
Reverse Voltage Leakage Current
(V
Diode Capacitance Temperature Coefficient
(V
This device is designed in the Surface Mount package for
Device Dissipation @T
MMBV3102LT1
R
Device Type
=10 Adc)
R
R
=4.0Vdc,f=1.0MHz)
=15Vdc)
Characteristic
Rating
A
= 25°C
C
V
Min
R
T
20
Diode Capacitance
=3.0Vdc,f=1.0MHz
Symbol
A
=25°C unless otherwise noted)
CATHODE
T
N o m
V
P
p F
T
I
F
stg
22
R
D
J
3
–55 to +150
Max
25
Value
+125
200
225
1.8
30
Symbol
V
T
I
(BR)R
Q,Figure of Merit
CC
R
V
f=50MHz
R
=3.0Vdc
Min
ANODE
200
LESHAN RADIO COMPANY, LTD.
1
Min
30
—
—
mW/°C
mAdc
Unit
Vdc
mW
°C
°C
Typ
300
—
—
MMBV3102LT1
C
Min
R
4.5
22 pF(Nominal) 30Volts
,Capacitance Ratio
CAPACITANCE DIODES
VOLTAGE VARIABLE
f=1.0MHz
CASE 318–08, STYLE 8
Max
0.1
1
—
—
SOT– 23 (TO–236AB)
C
3
/ C
MMBV3102LT1–1/2
2 5
2
ppm/°C
Unit
Vdc
Adc
Typ
4.8
3
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MMBV3102(LT1) Summary of contents
Page 1
Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency controland tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled ...
Page 2
TYPICAL CHARACTERISTICS 1.0MHz T = 25°C 8.0 A 4.0 0 0.3 0.5 1.0 2.0 3.0 5 REVERSE VOLTAGE (VOLTS) R Figure 1. Diode Capacitance 100 ...