MMBV3102 Leshan Radio Company Co., Ltd., MMBV3102 Datasheet
MMBV3102
Manufacturer Part Number
MMBV3102
Description
Silicon Tuning Diode
Manufacturer
Leshan Radio Company Co., Ltd.
Datasheet
1.MMBV3102.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBV3102LT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
MMBV3102LT1G
Manufacturer:
ON
Quantity:
30 000
Silicon Tuning Diode
general frequency controland tuning applications. It provides
solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
MAXIMUM RATINGS
Reverse Voltage
Forward Current
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV3102LT1= M4C
ELECTRICAL CHARACTERISTICS(T
Reverse Breakdown Voltage
(I
Reverse Voltage Leakage Current
(V
Diode Capacitance Temperature Coefficient
(V
This device is designed in the Surface Mount package for
Device Dissipation @T
MMBV3102LT1
R
Device Type
=10 Adc)
R
R
=4.0Vdc,f=1.0MHz)
=15Vdc)
Characteristic
Rating
A
= 25°C
C
V
Min
R
T
20
Diode Capacitance
=3.0Vdc,f=1.0MHz
Symbol
A
=25°C unless otherwise noted)
CATHODE
T
N o m
V
P
p F
T
I
F
stg
22
R
D
J
3
–55 to +150
Max
25
Value
+125
200
225
1.8
30
Symbol
V
T
I
(BR)R
Q,Figure of Merit
CC
R
V
f=50MHz
R
=3.0Vdc
Min
ANODE
200
LESHAN RADIO COMPANY, LTD.
1
Min
30
—
—
mW/°C
mAdc
Unit
Vdc
mW
°C
°C
Typ
300
—
—
MMBV3102LT1
C
Min
R
4.5
22 pF(Nominal) 30Volts
,Capacitance Ratio
CAPACITANCE DIODES
VOLTAGE VARIABLE
f=1.0MHz
CASE 318–08, STYLE 8
Max
0.1
1
—
—
SOT– 23 (TO–236AB)
C
3
/ C
MMBV3102LT1–1/2
2 5
2
ppm/°C
Unit
Vdc
Adc
Typ
4.8
3
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MMBV3102 Summary of contents
Page 1
... Controlled and Uniform Tuning Ratio MAXIMUM RATINGS Rating Reverse Voltage Forward Current Device Dissipation @T = 25°C A Derate above 25°C Junction Temperature Storage Temperature Range DEVICE MARKING MMBV3102LT1= M4C ELECTRICAL CHARACTERISTICS(T Characteristic Reverse Breakdown Voltage (I =10 Adc) R Reverse Voltage Leakage Current (V =15Vdc) R Diode Capacitance Temperature Coefficient (V =4 ...
Page 2
... V = 3.0Vdc R 1. 1.0MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 +100 +140 Figure 4. Diode Capacitance measured at 3.0 Vdc divided by C measured at 25 Vdc MMBV3102LT1 6.0 9 FREQUENCY ( GHz ) Figure 2. Figure of Merit –25 0 +25 +50 +75 +100 T , AMBIENT TEMPERATURE (°C) A MMBV3102LT1–2/2 30 +125 ...