MID112 Dc Components, MID112 Datasheet
MID112
Manufacturer Part Number
MID112
Description
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.MID112.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
Junction Temperature
Storage Temperature
Designed for general purpose power and switching
such as output or driver stages in applications such
as switching regulators, converters, and amplifiers.
1 = Base
2 = Collector
3 = Emitter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Output Capacitance
Characteristic
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
(1)
C
=25
DISCRETE SEMICONDUCTORS
o
C)
(1)
(T
Symbol
V
V
V
T
A
P
=25
T
CBO
CEO
EBO
STG
I
C
D
J
Symbol
V
BV
BV
V
o
I
I
CE(sat)
h
h
h
C)
I
BE(on)
C
CBO
CEO
EBO
FE1
FE2
FE3
CBO
CEO
ob
-55 to +150
Rating
+150
100
100
20
5
2
Min
100
100
500
200
1K
-
-
-
-
-
-
Typ
Unit
o
o
W
-
-
-
-
-
-
-
-
-
-
-
V
V
V
A
C
C
Max
12K
100
2.5
2.8
10
20
2
-
-
-
-
(0.80)
.284(7.20)
.268(6.80)
.032
(0.90)
.035
Max
Unit
Max
mA
pF
V
V
V
V
-
-
-
A
A
Dimensions in inches and (millimeters)
1
.217(5.50)
.205(5.20)
.268(6.80)
.252(6.40)
(4.60)
.181
2
2
I
I
V
V
V
I
I
I
I
I
V
C
C
C
C
C
C
C
CB
CE
BE
CB
=1mA
=30mA
=2A, I
=2A, V
=0.5A, V
=2A, V
=4A, V
Typ
3
=80V
=50V
=5V
=10V
(6.50)
.256
B
Test Conditions
CE
CE
CE
=8mA
Min
CE
=3V
=3V
=3V
=3V
MID112
.095(2.40)
.087(2.20)
.022(0.55)
.018(0.45)
.024(0.60)
.018(0.45)
.059(1.50)
.035(0.90)
TO-251
.063(1.60)
.055(1.40)
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