GB15B60KD International Rectifier, GB15B60KD Datasheet - Page 2

• Manufacturer Part Number: GB15B60KD
• Description: Search -----> IRGB15B60KD
• Manufacturer: International Rectifier

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IRG/B/S/SL15B60KD
Electrical Characteristics @ T
Switching Characteristics @ T
Note
RBSOA
SCSOA
V
∆V
V
V
∆
g
I
V
I
Qg
Qge
Qgc
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
on
off
tot
ies
oes
res
(BR)CES
2
GE(th)

/
∆
/∆T
T
to
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
„
are on page 15
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
–––
––– 2.05 2.50
––– 2.10 2.60
––– 10.6 –––
–––
–––
––– 1.20 1.45
––– 1.20 1.45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.5
3.5
10
FULL SQUARE
1.80 2.20
–––
500 1000
––– ±100
220
340
560
184
355
490
835 1070
203
850
540
0.3
4.5
-10
5.0
7.0
–––
56
26
34
16
20
34
18
28
75
35
92
29
–––
–––
––– mV/°C V
150
330
455
785
200
470
600
226
–––
–––
–––
720
111
5.5
–––
84
10
39
44
22
26
44
25
36
33
V/°C
µA
nA
nC
pF
V
V
V
S
V
µJ
ns
µJ
ns
µs
µJ
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
V
Ls = 150nH
I
V
Ls = 150nH, T
I
V
Ls = 150nH
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
T
V
T
V
V
C
C
C
C
C
C
C
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
CC
GE
= 15A, V
= 15A, V
= 15A, V
= 15A
= 15A
= 15A
= 15A, V
= 15A, V
= 15A, V
= 15A, V
= 150°C
= 150°C, I
= 150°C, Vp =600V,R
= 500V, V
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V,R
= 15V, R
= 15V,R
= 15V, R
= 0V
= 30V
= 360V, V
= 400V, I
= 15V,R
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
CC
CC
CE
CE
C
C
C
Conditions
Conditions
G
G
G
= 500µA
= 1.0mA, (25°C-150°C)
T
C
G
G
GE
F
= 250µA
= 1.0mA, (25°C-150°C)
= 20A, PW=80µs
= 15V
= 15V
= 15V
J
= 400V
= 400V
J
= 400V
= 400V
J
= 22Ω, L = 200µH
= 22Ω, L = 200µH
GE
= 22Ω, Ls = 150nH
= 62A, Vp =600V
= 600V
= 600V, T
= 22Ω, L = 200µH
= 22Ω, L = 200µH
= 15A, L = 200µH
= 150°C
= 25°C
= 150°C
= +15V to 0V,
= +15V to 0V
T
T
www.irf.com
J
J
= 25°C ƒ
= 150°C ƒ
G
T
T
J
J
J
= 150°C
= 22Ω
= 125°C
= 150°C
R
G
= 22Ω
9, 10,11
Ref.Fig.
5, 6,7
9, 10,11
CT4,WF3
17,18,19
Ref.Fig.
12
WF1WF2
13,15
14, 16
20,21
WF4
CT4
CT4
CT3
CT1
WF1
WF2
CT2
CT4
CT4
8
4