IRGPC20F IRF, IRGPC20F Datasheet

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IRGPC20F

Manufacturer Part Number
IRGPC20F
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
IRF
Datasheet

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Part Number
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Part Number:
IRGPC20F
Manufacturer:
IR
Quantity:
12 500
Previous Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
Features
Thermal Resistance
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
10kHz) See Fig. 1 for Current vs. Frequency curve
J
STG
CES
GE
ARV
D
D
@ T
@ T
JC
CS
JA
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
To Order
Index
C-69
G
n-channel
Min.
300 (0.063 in. (1.6mm) from case)
E
C
10 lbf•in (1.1N•m)
-55 to +150
Max.
6 (0.21)
600
±20
IRGPC20F
9.0
5.0
16
64
64
24
Typ.
60
0.24
Next Data Sheet
@V
Fast Speed IGBT
TO-247AC
V
V
GE
CE(sat)
CES
= 15V, I
PD - 9.1022
Max.
= 600V
2.1
40
2.8V
C
= 9.0A
Revision 0
Units
g (oz)
Units
°C/W
mJ
°C
W
V
A
V

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IRGPC20F Summary of contents

Page 1

... Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight Index Next Data Sheet IRGPC20F Fast Speed IGBT n-channel TO-247AC Max. 600 16 9 ± ...

Page 2

... Previous Datasheet IRGPC20F Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...

Page 3

... ° ate-to-E m itter V olta Fig Typical Transfer Characteristics C-71 To Order Next Data Sheet IRGPC20F ular lta 100 ) ° ° µ ...

Page 4

... Previous Datasheet IRGPC20F 100 ase Tem perature (° Fig Maximum Collector Current vs. Case Temperature 0 ...

Page 5

... 0.1 -60 -40 - ase Tem peratu re (° Fig Typical Switching Losses Case Temperature C-73 To Order Next Data Sheet IRGPC20F Voltage 9. 4 100 120 140 160 vs. ...

Page 6

... Previous Datasheet IRGPC20F 4 150 ° 3.0 2.0 1.0 0 llector- itte r Current ( Fig Typical Switching Losses vs. Collector-to-Emitter Current Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig ...

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