FM24W256 Ramtron, FM24W256 Datasheet

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FM24W256

Manufacturer Part Number
FM24W256
Description
256Kb Wide Voltage Serial F-RAM
Manufacturer
Ramtron
Datasheet

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Preliminary
FM24W256
256Kb Wide Voltage Serial F-RAM
Features
256K bit Ferroelectric Nonvolatile RAM
Fast Two-wire Serial Interface
Description
The FM24W256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system
EEPROM and other nonvolatile memories.
The FM24W256 performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM24W256 is capable of
supporting 10
times more write cycles than EEPROM.
These capabilities make the FM24W256 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24W256 provides substantial benefits to
users of serial EEPROM, yet these benefits are
available in a hardware drop-in replacement. The
FM24W256 is available in industry standard 8-pin
SOIC package using a familiar two-wire protocol. It
is guaranteed over an industrial temperature range of
-40°C to +85°C.
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.3
July 2011
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
38 year Data Retention (
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Up to 1 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
level
14
reliability
read/write cycles, or 100 million
@
problems
+75ºC)
14
) Read/Writes
caused
by
Industry Standard Configuration
Pin Configuration
* Not Recommended for New Designs
Low Power Operation
Pin Names
A0-A2
SDA
SCL
WP
VSS
VDD
Ordering Information
FM24W256-G
FM24W256-GTR
FM24W256-EG*
FM24W256-EGTR*
Wide Voltage Operation 2.7V-5.5V
100 A Active Current (100 kHz)
15 A Standby Current (typ.)
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Packages
VSS
A0
A1
A2
1850 Ramtron Drive, Colorado Springs, CO 80921
Function
Device Select Address
Serial Data/Address
Serial Clock
Write Protect
Ground
Supply Voltage
1
2
3
4
Ramtron International Corporation
8-pin “Green”/RoHS SOIC
8-pin “Green”/RoHS SOIC, Tape
& Reel
8-pin “Green”/RoHS EIAJ SOIC
8-pin “Green”/RoHS EIAJ SOIC,
Tape & Reel
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
8
7
6
5
VDD
WP
SCL
SDA
Page 1 of 13
Datasheet pdf - http://www.DataSheet4U.net/

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FM24W256 Summary of contents

Page 1

... EEPROM. These capabilities make the FM24W256 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss ...

Page 2

... SCL Input WP Input VDD Supply VSS Supply Rev. 1.3 July 2011 FM24W256 - 256Kb Wide Voltage I2C F-RAM Address Counter Latch Serial to Parallel Converter Control Logic Figure 1. Block Diagram Pin Description Device Select Address 0-2: These pins are used to select one devices of the same type on the same two-wire bus ...

Page 3

... This is explained in more detail in the interface section below. Users expect several obvious system benefits from the FM24W256 due to its fast write cycle and high endurance as compared with EEPROM. However there are less obvious benefits as well. For example ...

Page 4

... Slave Address The first byte that the FM24W256 expects after a start condition is the slave address. As shown in Figure 4, the slave address contains the device type, the device select address bits, and a bit that specifies if the transaction is a read or a write ...

Page 5

... After the address information has been transmitted, data transfer between the bus master and the FM24W256 can begin. For a read operation the FM24W256 will place 8 data bits on the bus then wait for an acknowledge from the master. If the acknowledge occurs, the FM24W256 will transfer the next sequential byte ...

Page 6

... Figure 6. Multiple Byte Write There are four ways to properly terminate a read operation. Failing to properly terminate the read will most likely create a bus contention as the FM24W256 attempts to read out additional data onto the bus. The four valid methods are: 1. The bus master issues a no-acknowledge in the 9 This is illustrated in the diagrams below ...

Page 7

... Address Acknowledge Slave Address 1 A Data Byte Acknowledge Figure 8. Sequential Read Address Address MSB A Address LSB Acknowledge Figure 9. Selective (Random) Read FM24W256 - 256Kb Wide Voltage I2C F-RAM No Acknowledge Stop 1 P Data No Acknowledge Stop A Data Byte 1 P Data Acknowledge Start Address ...

Page 8

... IH -0.3V and V , other inputs Stop command issued Does not apply to WP, A2-A0 pins FM24W256 - 256Kb Wide Voltage I2C F-RAM Ratings -1.0V to +7.0V -1.0V to +7.0V and V < V +1. -55C to +125C 260 C 3.5kV 1.25kV 200V MSL-1 (SOIC) MSL-2 (EIAJ) ...

Page 9

... Max Units min -40 +85 2.7V to 5.5V unless otherwise specified min) to First Access (Start condition) DD min) DD waveform. DD FM24W256 - 256Kb Wide Voltage I2C F-RAM Min Max Min Max Units 0 400 0 1000 kHz s 1.3 0.6 s 0.6 0.4 s 0.9 0.55 s 1.3 0.5  ...

Page 10

... Read Bus Timing SCL t SU:SDA SDA Start Write Bus Timing SCL SDA Data Retention Symbol Parameter T +85º +80ºC @ +75ºC @ Rev. 1.3 July 2011 FM24W256 - 256Kb Wide Voltage I2C F-RAM HIGH BUF t AA Stop Start t HD:STA ...

Page 11

... Legend: XXXXXX= part number, P= package type (G=SOIC, EG=EIAJ SOIC) R=rev code, LLLLLLL= lot code RIC=Ramtron Int’l Corp, YY=year, WW=work week Example: FM24W256, “Green” SOIC package, Year 2010, Work Week 37 FM24W256-G A00002G1 RIC1037 Recommended PCB Footprint 7.70 3.70 2.00 0.65 1.27 0.25 0.50 0. ...

Page 12

... Legend: XXXXXX= part number, P= package type (G=SOIC, EG=EIAJ SOIC) R=rev code, LLLLLLL= lot code RIC=Ramtron Int’l Corp, YY=year, WW=work week Example: FM24W256, “Green” EIAJ SOIC package, Year 2010, Work Week 37 FM24W256-EG A00002G1 RIC1037 Recommended PCB Footprint 9.30 5.00 2.15 0.65 1.27 0.19 0.25 0- 8 ...

Page 13

... Rev. 1.3 July 2011 Date Summary Initial Release Added ESD ratings. Changed V Changed to MSL-2 for EIAJ package. Changed t EIAJ package is Not Recommended for New Designs (NRND). FM24W256 - 256Kb Wide Voltage I2C F-RAM (max +0.3V and t spec limits Page ...

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