MC74HCT541ADWG ON Semiconductor, MC74HCT541ADWG Datasheet - Page 3

• Manufacturer Part Number: MC74HCT541ADWG
• Description: IC BUFF/DVR TRI-ST 8BIT 20SOIC
• Manufacturer: ON Semiconductor
• Series: 74HCTr

Specifications of MC74HCT541ADWG

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 1
• Number Of Bits Per Element: 8
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Logic Family: 74HCT
• Number Of Channels Per Chip: Octal
• Polarity: Non-Inverting
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Temperature: 125 C
• Mounting Style: SMD/SMT
• High Level Output Current: - 6 mA
• Input Bias Current (max): 4 uA
• Low Level Output Current: 6 mA
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 55 C
• Number Of Lines (input / Output): 3
• Output Type: 3-State
• Propagation Delay Time: 23 ns @ 5 V
• Circuit Type: Silicon Gate
• Current, Supply: 160 μA
• Function Type: 8-Channels
• Logic Function: Buffer/Driver/Receiver
• Number Of Circuits: Octal
• Package Type: SOIC-20
• Special Features: Non-Inverting, Tri-State
• Temperature, Operating, Range: -55 to +125 °C
• Voltage, Supply: 4.5 to 5.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MC74HCT541ADWG; MC74HCT541ADWGOS

1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = I
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
* Used to determine the no−load dynamic power consumption: P
DC CHARACTERISTICS
Symbol
AC CHARACTERISTICS
Symbol
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
DI
t
t
t
t
V
t
t
t
t
C
C
V
V
PLH
PLZ
PZL
TLH
V
I
I
PHZ
PZH
C
PHL
THL
I
CC
OZ
OH
OL
in
out
PD
IH
CC
IL
in
,
,
,
,
Semiconductor High−Speed CMOS Data Book (DL129/D).
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output Voltage
Maximum Low−Level Output Voltage
Maximum Input Leakage Current
Maximum 3−State Leakage Current
Maximum Quiescent Supply Current
(per Package)
Additional Quiescent Supply Current
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
Maximum Input Capacitance
Maximum 3−State Output Capacitance (Output in High Impedance State)
Power Dissipation Capacitance (Per Buffer)*
Parameter
CC
(Voltages Referenced to GND)
(V
+ ΣDI
CC
CC
= 5.0V, C
.
L
= 50 pF, Input t
Parameter
V
|I
V
|I
V
|I
V
V
|I
V
V
Output in High Impedance State
V
V
V
I
V
V
I
out
out
out
out
out
out
out
out
in
in
in
in
in
in
out
in
in
in
= V
= V
= V
= V
= V
= V
= V
= 2.4V, Any One Input
= V
| ≤ 20mA
| ≤ 20mA
| ≤ 20mA
| ≤ 20mA
= 0mA
= 0mA
= 0.1V or V
= 0.1V or V
= V
http://onsemi.com
MC74HCT541A
IH
IH
IH
IH
CC
IL
CC
CC
CC
or V
r
or V
or V
or V
or V
or GND
or GND
or GND, Other Inputs
= t
or GND
Condition
f
D
IH
IL
IL
IL
IL
= 6 ns)
= C
3
CC
CC
PD
− 0.1V
− 0.1V
|I
|I
out
out
V
CC
| ≤ 6.0mA
| ≤ 6.0mA
2
f + I
CC
V
CC
V
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
5.5
5.5
5.5
. For load considerations, see Chapter 2 of the
V
CC
−55 to 25°C
−55 to 25°C
Typical @ 25°C, V
≥ −55°C
23
30
30
12
10
15
3.98
0.26
±0.1
±0.5
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
2.9
4
Guaranteed Limit
Guaranteed Limit
55
≤85°C
≤85°C
28
34
34
15
10
15
3.84
0.33
±1.0
±5.0
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
40
25 to 125°C
CC
2.4
= 5.0 V
≤125°C
≤125°C
±10.0
3.70
0.40
±1.0
160
32
38
38
18
10
15
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
Unit
Unit
mA
mA
mA
mA
ns
ns
ns
ns
pF
pF
pF
V
V
V
V