RB160A30 Rohm, RB160A30 Datasheet

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RB160A30

Manufacturer Part Number
RB160A30
Description
Schottky barrier diode
Manufacturer
Rohm
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB160A30T-32
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Schottky barrier diode
RB160A30
General rectification
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I
4) High ESD.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (t=100µs)
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltagae
Reverse current
ESD break down voltage
Applications
Features
Construction
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
R
Parameter
.
Parameter
Symbol
ESD
V
I
R
F
Min.
0.33
20
Symbol
-
Tstg
V
I
V
FSM
Io
Tj
RM
Taping specifications (Unit : mm)
R
Dimensions (Unit : mm)
H1
H2
ROHM : MSR
Typ.
0.43
9.00
-
BLUE
Max.
0.48
L1
-55 to +150
50
29±1
-
Limits
150
A
30
30
70
1
Manufacture Date
Unit
µA
kV
V
F
E
L2
3.0±0.2
I
V
C=100pF,R=1.5kΩ, forward and reverse : 1 time
F
R
=1.0A
CATHODE BAND
=30V
Unit
V
V
A
A
C
D
B
BROWN
29±1
Conditions
*H1(6mm):BROWN
φ0.6±0.1
Symbol
|L1-L2|
H1
H2
B
C
D
E
Rev.B
T-31   52.4±1.5
T-32
T-31   5.0±0.5
T-31
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
Standard dimension
RB160A30
value(mm)
26.0
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
±0.7
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
φ2.5±0.2
0
+0.4
0
1/3

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RB160A30 Summary of contents

Page 1

... FSM 150 Tj -55 to +150 Tstg Min. Typ. Max. Unit 0.33 0.43 0. =1. 9.00 50 µA V =30V R kV C=100pF,R=1.5kΩ, forward and reverse : 1 time RB160A30 φ0.6±0.1 29±1 φ2.5±0.2 BROWN Standard dimension Symbol value(mm) T-31   52.4±1.5 A +0.4 T-32 26 T-31   5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T- T-32 T-31 1/2A±1.2 ...

Page 2

... DISPERSION MAP Mounted on epoxy board 1000 IF=0.5A Rth(j-l) IM=1mA time(s) 100 td=300us Rth(j- 0.001 0.01 0 100 100 TIME:t(s) Rth-t CHARACTERISTICS RB160A30 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 Ta=25℃ 390 f=1MHz 380 VR=0V n=10pcs 370 360 350 AVE:324 ...

Page 3

... ESD DISPERSION MAP 2 D=t/T 2 VR=15V DC Tj=125℃ T 1.5 D=1/2 1 0.5 Sin(θ=180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve(Io-Ta) RB160A30 D=t/T 2 VR=15V DC Tj=125℃ T 1.5 D=1/2 1 Sin(θ=180) 0.5 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) Rev.B Io ...

Page 4

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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