MWI35-12A5 IXYS Corporation, MWI35-12A5 Datasheet - Page 2

• Manufacturer Part Number: MWI35-12A5
• Description: Igbt Modules Sixpack Short Circuit Soa Capability Square Rbsoa
• Manufacturer: IXYS Corporation

©1998 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: [phone], Fax: [phone]
Symbol
V
V
I
I
V
C
C
C
t
t
t
t
E
E
R
R
Reverse Diode (FRED)
V
I
I
t
R
R
CES
GES
F
RM
d(on)
r
d(off)
f
rr
GE(th)
CE(sat)
on
off
F
(BR)CES
ies
oes
res
thJC
thJS
thJC
thJS
Conditions
V
I
V
V
I
with heatsink compound
I
I
T
T
I
T
with heatsink compound
C
C
F
F
F
C
C
J
GE
CE
CE
= 25 A, V
= 25 A, V
= 25 A, V
= 1 mA, V
= 25 A, V
D-68623 Lampertheim
= 125 C, V
= 25 C
= 80 C
= 0 V
Inductive load, T
I
V
= V
= 0 V, V
V
C
CE
CE
= 25 A, V
CES
= 600 V, R
= 25 V, V
GE
GE
GE
GE
CE
GE
R
= 0 V
= 0 V, T
= 0 V, -di
= 15 V
= V
= 20 V
= 600 V
GE
GE
GE
= ±15 V
G
= 0 V, f = 1 MHz
= 39
J
J
F
= 125 C
= 125 C
/dt = 400 A/ s
T
T
J
J
(T
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
1200
min.
min.
4.5
Characteristic Values
Characteristic Values
IXYS reserves the right to change limits, test conditions and dimensions.
1650
typ.
typ.
250
110
100
500
200
2.2
3.8
2.8
1.2
2.4
1.9
2.6
20
70
70
2
max.
max.
200 nA
6.5
1.2 mA
2.7
0.6 K/W
2.6
2.3
1.3 K/W
50
30
K/W
K/W
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]
mA
mJ
mJ
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
A
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
Equivalent Circuits for Simulation
Dimensions in mm (1 mm = 0.0394")
C
C
C
C
th1
th2
th1
th2
V
V
= 0.07 J/K; R
= 0.18 J/K; R
= 0.05 J/K; R
= 0.09 J/K; R
0
0
= 1.5 V; R
= 1.3 V; R
MWI 35-12 A5
GE
= 15 V; T
0
0
th1
th2
th1
th2
= 40.7 m
= 24.9 m
= 0.586 K/W
= 0.014 K/W
= 1.313 K/W
= 0.025 K/W
J
= 125°C)
J
= 125°C)
842