VVZB120 IXYS Corporation, VVZB120 Datasheet
VVZB120
Manufacturer Part Number
VVZB120
Description
Three Phase Half Controlled Rectifier Bridge With Igbt And Fast Recovery Diode For Braking System
Manufacturer
IXYS Corporation
Datasheet
1.VVZB120.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VVZB120-16N01
Manufacturer:
SEMIKRON
Quantity:
134
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
V
1200
1400
1600
Symbol
I
I
I
I
(di/dt)
(dv/dt)
P
P
V
V
I
I
I
P
V
I
I
I
I
P
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
dAV
FRMS
FSM
2
C25
C80
CM
F(AV)
F(RMS)
FRM
FSM
V
t
RRM
GM
GAVM
GE
tot
RRM
tot
CES
/I
/I
TSM
TRMS
cr
cr
Conditions
T
T
T
T
T
T
T
f = 50 Hz, t
V
I
di
T
R
T
I
T
Continuous
T
T
t
T
T
T
T
T
T
T
p
G
T
case
case
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
case
case
case
case
case
case
VJ
VJ
case
D
GK
G
= 0.45 A,
/dt = 0.45 A/µs
=
= I
= T
= T
= T
= 80°C, sinusoidal 120°
= 80°C, per leg
= ¥; method 1 (linear voltage rise)
= 25°C, t = 10 ms, V
= 150°C,t = 10 ms, V
= 25°C, t = 10 ms, V
= 150°C,t = 10 ms, V
= 25°C to 150°C
= Pulse width limited by T
= 45°C, t = 10 ms
= 150°C,t = 10 ms
= 80°C, t
2
= 25°C, DC
= 80°C, DC
= 80°C
= 80°C, rectangular d = 0.5
= 80°C, rectangular d = 0.5
= 80°C
d(AV)
/
3
VJM
VJM
VJM
Type
VVZB 120-12 io1
VVZB 120-14 io1
VVZB 120-16 io1
V
/3
DRM
; V
P
= 200 µs
DR
P
=
= 10 µs, f = 5 kHz
2
t
t
t
/
P
P
P
3
V
= 30 µs
= 300 µs
= 10 ms
DRM
repetitive, I
non repetitive, I
R
R
R
R
= 0 V
= 0 V
= 0 V
= 0V
VJM
T
= 150 A
T
= I
d(AV)
/3
Maximum Ratings
2810
2240
1000
1200
1200
± 20
120
750
670
150
500
140
200
180
222
0.5
tbd
77
10
78
52
27
38
64
5
1
A/µs
A/µs
V/µs
W
W
W
W
W
W
A
A
A
A
A
A
V
V
A
A
A
V
A
A
A
A
A
V
I
Features
• Soldering connections for PCB
• Isolation voltage 3600 V~
• Ultrafast freewheel diode
• Convenient package outline
Applications
• Drive Inverters with brake system
Advantages
• 2 functions in one package
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
dAV
mounting
capability
RRM
= 1200-1600 V
= 120 A
VVZB 120
1 - 3
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VVZB120 Summary of contents
Page 1
Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System V Type RRM V 1200 VVZB 120-12 io1 1400 VVZB 120-14 io1 1600 VVZB 120-16 io1 Symbol Conditions 80°C, sinusoidal 120° dAV ...
Page 2
Symbol Conditions RRM DRM 150°C R RRM DRM 100 For power-loss ...
Page 3
Symbol Conditions 25° RRM 0 150°C R RRM 25° For power-loss calculations only ...