EFC120B-100F Excelics Semiconductor, Inc., EFC120B-100F Datasheet
EFC120B-100F
Manufacturer Part Number
EFC120B-100F
Description
10-14V Low Distortion GAAS Power Fet
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
1.EFC120B-100F.pdf
(2 pages)
DATA SHEET
Low Distortion GaAs Power FET
ELECTRICAL CHARACTERISTICS (T
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
SYMBOLS
SYMBOLS
P
G
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
1dB
1dB
HERMETIC 100mil CERAMIC FLANGE PACKAGE
+28.0dBm TYPICAL OUTPUT POWER
HIGH BVgd FOR 10V BIAS
9.0dB TYPICAL POWER GAIN AT 8GHz
0.3 X 1200 MICRON RECESSED “MUSHROOM”
GATE
Si
ADVANCED EPITAXIAL DOPING PROFILE
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
3
2. Exceeding any of the above ratings may reduce MTTF below design goals.
N
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
4
Excelics
PASSIVATION
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage Igd=1.2mA
Source Breakdown Voltage Igs=1.2mA
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
PARAMETERS
PARAMETERS/TEST CONDITIONS
O
C
Vds=3V, Vgs=0V
Vds=3V, Ids=3.0mA
Vds=3V, Vgs=0V
ABSOLUTE
14V
-8V
Idss
30mA
26dBm
175
-65/175
3.2W
a
= 25
o
C
f = 8GHz
f = 12GHz
f = 8GHz
f = 12GHz
f = 12GHz
o
C
O
C)
10 Rad.
1
63 Dia.
G
256 TYP.
MIN
CONTINUOUS
10V
-4.5V
270mA
5mA
@ 3dB Compression
150
-65/150
2.7W
26.0
160
100
-15
-10
4.0
EFC120B-100F
o
All Dimensions In mils
C
o
TYP
C
28.0
28.0
-2.5
260
140
43*
9.0
6.0
-20
-17
30
256 TYP.
98
24
MAX
-4.0
360
2
D
UNIT
o
dBm
mA
C/W
mS
dB
%
30
V
V
V
34
98
24
79
35
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EFC120B-100F Summary of contents
Page 1
... MIN f = 8GHz f = 12GHz f = 8GHz f = 12GHz f = 12GHz Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=3.0mA ABSOLUTE CONTINUOUS 14V -8V Idss 30mA 26dBm o 175 C o -65/175 C 3.2W EFC120B-100F 256 TYP. 24 All Dimensions In mils TYP MAX UNIT 28.0 dBm 26.0 28.0 9.0 dB 4.0 6 160 260 360 mA 100 ...
Page 2
... EFC120B-100F --- S12 --- --- S22 --- Ang Mag Ang 44.1 0.311 -73.2 35.0 0.362 -71.6 23.0 0.369 -87.9 13.8 0.365 -100.5 5.4 0.350 -114.3 -2.6 0.332 -132.7 -9.7 0.347 -149.7 -16.2 0.380 -169.0 -24.7 ...