EFC240B Excelics Semiconductor, Inc., EFC240B Datasheet
EFC240B
Manufacturer Part Number
EFC240B
Description
Low Distortion GAAS Power Fets
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
1.EFC240B.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS (T
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
SYMBOLS
SYMBOLS
P
G
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
“MUSHROOM” GATE
1dB
1dB
LINEARITY AND RELIABILITY
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN AT 12GHz
HIGH BVgd FOR 10V BIAS
0.3 X 2400 MICRON RECESSED
Si
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
Idss SORTED IN 40mA PER BIN RANGE
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
2. Exceeding any of the above ratings may reduce MTTF below design goals.
3
N
4
PASSIVATION
Excelics
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
Power Added Efficiency at 1dB compression
Vds=10V, Ids=50% Idss
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage Igd=2.4mA
Source Breakdown Voltage Igs=2.4mA
Thermal Resistance (Au-Sn Eutectic Attach)
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
PARAMETERS
PARAMETERS/TEST CONDITIONS
PRELIMINARY DATA SHEET
O
C
Vds=3V, Ids=6mA
Vds=3V, Vgs=0V
ABSOLUTE
14V
-8V
Idss
60mA
29dBm
175
-65/175
a
6.8 W
= 25
o
C
f=12GHz
40
f=12GHz
f=12GHz
f=18GHz
f=18GHz
Low Distortion GaAs Power FET
o
O
C
C)
95
S
1
G
D
Chip Thickness: 75
All Dimensions In Microns
120
MIN
29.0
S
CONTINUOUS
320
200
-15
-10
7.0
10V
-4.5V
570mA
10mA
@ 3dB Compression
150
-65/150
5.7 W
50
o
50
G
D
C
EFC240B
TYP
31.0
31.0
o
520
280
-2.5
960
-20
-17
156
8.5
6.0
33
C
20
S
13 microns
G
D
MAX
720
-4.0
2
S
G
D
UNIT
o
dBm
C/W
mA
mS
dB
%
V
V
V
S
48
100
350
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EFC240B Summary of contents
Page 1
... C) a f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz Vds=3V, Vgs=0V Vds=3V, Ids=6mA ABSOLUTE 14V -8V Idss 60mA 29dBm o 175 C o -65/175 C 6.8 W EFC240B 960 50 156 120 50 Chip Thickness microns All Dimensions In Microns MIN TYP MAX UNIT 29.0 31.0 dBm 31 ...
Page 2
... EFC240B S22 S22 Mag Ang 0.296 -132.9 0.374 -146.8 0.409 -152.2 0.433 -154.1 0.460 -157.6 0.487 -158.3 0.512 -159.2 0.549 -161.0 0.586 -161.9 0.620 -162.0 0.647 -162.2 0.673 -163.2 0.690 -165.6 0.716 -168.5 0.739 -170.1 ...