BAT854AW Philips Semiconductors (Acquired by NXP), BAT854AW Datasheet - Page 3

• Manufacturer Part Number: BAT854AW
• Description: BAT854W Series; Schottky Barrier (double) Diodes;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
2001 Feb 27
Per diode
V
I
I
I
T
T
T
Per diode
V
I
C
R
F
FRM
FSM
amb
R
SYMBOL
SYMBOL
SYMBOL
stg
j
amb
R
F
d
th j-a
Schottky barrier (double) diodes
= 25 C; unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
continuous forward voltage
continuous reverse current
diode capacitance
thermal resistance from junction to ambient note 1
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
PARAMETER
t
t = 8.3 ms half sinewave;
JEDEC method
see Fig.6
V
V
p
R
R
I
I
I
I
I
F
F
F
F
F
= 25 V; note 1; see Fig.7
= 1 V; f = 1 MHz; see Fig.8
1 s;
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
3
CONDITIONS
CONDITIONS
0.5
CONDITIONS
200
260
340
65
65
MIN.
TYP.
VALUE
BAT854W series
625
40
200
300
1
+150
150
+150
420
550
0.5
20
Product specification
MAX.
MAX.
UNIT
K/W
V
mA
mA
A
mV
mV
mV
mV
mV
pF
C
C
C
A
UNIT
UNIT