FR1001G Taiwan Semiconductor (TSC), FR1001G Datasheet - Page 2

• Manufacturer Part Number: FR1001G
• Description: Pakage = TO-220 ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 10 ;; Ifsm (A)= 125
• Manufacturer: Taiwan Semiconductor (TSC)

12.0
10.0
200
150
300
125
250
150
100
100
8.0
4.0
6.0
0.2
75
25
50
50
0
1
0.1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
FIG.2- MAXIMUM FORWARD CURRENT DERATING
FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG
RATINGS AND CHARACTERISTIC CURVES (FR1001G THRU FR1007G)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
SURGE CURRENT PER LEG
50
NONINDUCTIVE
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
0
CURVE
2
0.5
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1.0
CASE TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE. (V)
2. Rise Time=10ns max. Sourse Impedance=
50
1 megohm 22pf
50 ohms
NON
INDUCTIVE
5
DUT
5
10
NONINDUCTIVE
10
10
OSCILLOSCOPE
(NOTE 1)
8.3ms Single Half Sine Wave
JEDEC Method
o
100
20
50
100
PULSE
GENERATOR
(NOTE 2)
- 273-
50
500
(-)
(+)
150
1000
100
+0.5A
-0.25A
-1.0A
FIG.2- TYPICAL REVERSE CHARACTERISTICS
FIG.6- TYPICAL INSTANTANEOUS FORWARD
1000
100
10
1.0
0
0.1
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
10
.2
80
40
20
.4
.1
2
4
.8
0
PER LEG
CHARACTERISTICS PER LEG
INSTANTANEOUS FORWARD VOLTAGE. (V)
.9
20
trr
1cm
Tj=125 C
Tj=25 C
1.0
40
SET TIME BASE FOR
5/ 10ns/ cm
0
0
1.1
60
1.2
80
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
o
1.3
100
1.4
120
140
1.5