BST62-70 Zetex Inc., BST62-70 Datasheet
BST62-70
Manufacturer Part Number
BST62-70
Description
PNP Darlington Transistor
Manufacturer
Zetex Inc.
Datasheet
1.BST62-70.pdf
(1 pages)
SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996
FEATURES
*
*
PARTMAKING DETAIL —
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
For typical characteristics graphs see FZTA63 (SOT223) datasheet.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pea Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Turn On Time
Turn Off Time
Fast Switching
High h
FE
amb
=25°C
SYMBOL
V
V
V
I
I
V
V
h
t
t
EBO
CES
on
off
627
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
MIN.
-85
-72
-10
1K
2K
1.5K Typical
400 Typical
3 - 82
amb
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
MAX.
-10
-10
-1.3
-1.3
-1.9
tot
j
CBO
CEO
EBO
= 25°C unless otherwise stated).
:T
stg
UNIT
V
V
V
V
V
V
ns
ns
A
A
2%
-65 to +150
CONDITIONS.
I
I
I
V
V
I
I
T
I
I
I
I
I
C
C
E
C
C
C
C
C
C
Bon
VALUE
j
EB
CE
=-10 A, I
=-10 A, I
=-10mA, I
=-500mA, I
=-500mA, I
=-500mA, I
=-150mA, V
=-500mA, V
=-500mA
=150°C
-500
-100
-1.5
-85
-72
-10
=-8V, I
=-72V, I
=I
1
BST62-70
Boff
=-0.5mA
C
E
E
C
=0
B
=0
=0
C
SOT89
=0*
=0
B
B
B
CE
CE
=-0.5mA
=-0.5mA
=-0.5mA
B
=-10V*
=-10V*
UNIT
C
mA
mA
W
°C
V
V
V
A
E
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