2N5716 Solitron Devices, Inc., 2N5716 Datasheet
2N5716
Manufacturer Part Number
2N5716
Description
Description = Low Power Field Effect Transistor ;; Case Style = TO18 ;; Geometry = FN2.2 ;; Page Number = E28+E29
Manufacturer
Solitron Devices, Inc.
Datasheet
1.2N5716.pdf
(2 pages)
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Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 72 ;; Geometry = FN2.5 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 8.0 ;; Crssmax (pF) = 4.0 ;; Vgs(off)min (V) = - ;; Vgs(off)max (V) = 8.0 ;; Lgssmax (nA) = 2.00 ;; Ylsmin (uM
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Description = Low Power Field Effect Transistor ;; Case Style = TO-72 ;; Geometry = FN39.8 ;; Bvgssmin (V) = 40 ;; Cissmax (pF) = 25 ;; Crssmax (pF) = 5.0 ;; Vgs(off) Min (V) = 0.7 ;; Vgs(off) Max (V) = 2.0 ;; Lgssmax (nA) = 0.25 ;; Ylsmin (
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Description = Low Power Field Effect Transistor ;; Case Style = TO-18 ;; Geometry = FN22.2 ;; Bvdgoor BVGSS Min (V) = 50 ;; Cissmax (pF) = 10.0 ;; Crssmax (pF) = - ;; Vgs(off) Min (V) = - ;; Vgs(off) Max (V) = 9.5 ;; Lgssmax (nA) = 1.00 ;; Ylsmin (
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