MPS2907A General Semiconductor, MPS2907A Datasheet

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MPS2907A

Manufacturer Part Number
MPS2907A
Description
Small Signal Transistor (PNP)
Manufacturer
General Semiconductor
Datasheet

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Document Number 88232
10-May-02
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature Range
Note:
(1) Valid provided that leads are kept at ambient temperature.
max.
0.022 (0.55)
0.181 (4.6)
0.098 (2.5)
TO-226AA (TO-92)
Bottom
View
0.142 (3.6)
Dimensions in inches
Small Signal Transistor (PNP)
T
Derate above 25°C
T
Derate above 25°C
and (millimeters)
A
C
= 25°C
= 25°C
New Product
Symbol
–V
–V
–V
R
R
P
P
–I
T
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
T
Features
• PNP Silicon Epitaxial Planar Transistor for
• On special request, this transistor is also
• This transistor is also available in the SOT-23 case
CBO
CEO
EBO
tot
tot
S
C
JA
JC
j
switching and amplifier applications.
manufactured in the pin configuration TO-18.
with the type designation MMBT2907A.
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Ratings at 25°C ambient temperature unless otherwise specified.
–55 to +150
Vishay Semiconductors
Value
200
formerly General Semiconductor
83.3
600
625
150
5.0
5.0
1.5
60
60
12
(1)
MPS2907A
mW/°C
mW/°C
www.vishay.com
°C/W
°C/W
Unit
mW
mW
mA
V
V
V
C
C
1

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MPS2907A Summary of contents

Page 1

... A P tot Derate above 25° 25° tot Derate above 25° MPS2907A Vishay Semiconductors formerly General Semiconductor Ratings at 25°C ambient temperature unless otherwise specified. Value 60 60 5.0 600 625 5.0 mW/°C 1.5 12 mW/°C (1) 200 83.3 150 – ...

Page 2

... MPS2907A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Parameter DC Current Gain Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage Collector Cut-off Current Collector Cut-off Current Base Cut-off Current Current Gain-Bandwidth Product Output Capacitance Emitter-Base Capacitance ...

Page 3

... Figure 2: Storage and Fall Time test circuit -30V INPUT 200 o PRF = 150 PPS Rise Time P.W. < 200 ns To Oscilloscope with 0 Rise Time 5.0 ns -30 V MPS2907A Vishay Semiconductors formerly General Semiconductor Min Typ Max — — 45 — — 10 — — 40 — — ...

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