BFR54 Philips Semiconductors (Acquired by NXP), BFR54 Datasheet - Page 3

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BFR54

Manufacturer Part Number
BFR54
Description
BFR54; NPN Medium Frequency Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet

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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1997 Jul 11
V
V
V
I
I
P
T
T
T
R
I
I
h
V
V
C
C
C
f
SYMBOL
SYMBOL
SYMBOL
C
CM
amb
CBO
EBO
T
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
BEsat
th j-a
c
e
re
NPN medium frequency transistor
= 25 C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
V
E
E
C
C
C
C
E
C
C
CE
I
I
= 0; V
= 0; V
= 0; V
= 10 mA; V
= 10 mA; I
= 10 mA; I
= i
= i
= 0 mA; V
open emitter
open base
open collector
T
C
C
amb
= 10 V; f = 100 MHz
= 10 mA
= 40 mA
e
c
= 0; V
= 0; V
CB
CB
EB
3
25 C; note 1
note 1
CONDITIONS
= 20 V
= 20 V; T
= 2 V
CONDITIONS
CB
EB
CB
B
B
CE
= 1 mA
= 1 mA
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
CONDITIONS
= 10 V; f = 1 MHz
= 1 V
j
= 125 C
40
700
500
490
MIN.
65
65
MIN.
VALUE
250
1.6
TYP.
40
15
4.5
100
200
500
+150
150
+150
Product specification
MAX.
400
30
100
250
850
4
4.5
MAX.
BFR54
UNIT
K/W
V
V
V
mA
mA
mW
C
C
C
UNIT
nA
nA
mV
mV
pF
pF
pF
MHz
MHz
UNIT
A

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