BFR540 Philips Semiconductors (Acquired by NXP), BFR540 Datasheet - Page 2

• Manufacturer Part Number: BFR540
• Description: BFR540; NPN 9 GHZ Wideband Transistor;; Package: SOT23 (SST3)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
QUICK REFERENCE DATA
Note
1. T
2000 May 30
V
V
I
P
h
C
f
G
F
SYMBOL
C
T
s
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
CBO
CES
tot
re
NPN 9 GHz wideband transistor
UM
21
s
2
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
DESCRIPTION
NPN silicon planar epitaxial transistor
in a SOT23 plastic package.
PINNING
PIN
1
2
3
I
open emitter
R
T
I
I
I
I
T
I
T
T
T
T
T
C
C
C
C
C
C
s
amb
amb
amb
s
amb
s
amb
s
amb
BE
= 40 mA; V
= i
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
=
=
=
= 0
70 C; note 1
c
base
emitter
collector
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
opt
opt
opt
= 0; V
; I
; I
; I
DESCRIPTION
C
C
C
2
= 10 mA; V
= 40 mA; V
= 10 mA; V
CB
CONDITIONS
CE
CE
CE
CE
CE
= 8 V; f = 1 MHz
= 8 V
= 8 V; f = 1 GHz
= 8 V;
= 8 V;
= 8 V;
CE
CE
CE
= 8 V;
= 8 V;
= 8 V;
fpage
Marking code: N29.
100
12
MIN.
Top view
1
Fig.1 SOT23.
Product specification
120
0.6
9
14
7
13
1.3
1.9
2.1
TYP.
3
MSB003
BFR540
20
15
120
500
250
1.8
2.4
MAX. UNIT
2
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dB
dB