S4010DS2

Manufacturer Part NumberS4010DS2
DescriptionTeccor® Sensitive SCR ;; Package= TO-92 Three-lead
ManufacturerTeccor Electronics
S4010DS2 datasheet
 


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Sensitive SCRs
Part Number
Isolated
TYPE
G
K
K
G
A
A
TO-220
TO-202
See “Package Dimensions” section for variations. (11)
S2006LS2
S2006FS21
S4006LS2
S4006FS21
6 A
S6006LS2
S6006FS21
S2006LS3
S2006FS31
S4006LS3
S4006FS31
S6006LS3
S6006FS31
S2008LS2
S2008FS21
S4008LS2
S4008FS21
S6008LS2
S6008FS21
8 A
S2008LS3
S2008FS31
S4008LS3
S4008FS31
S6008LS3
S6008FS31
S2010LS2
S2010FS21
S4010LS2
S4010FS21
S6010LS2
S6010FS21
10 A
S2010LS3
S2010FS31
S4010LS3
S4010FS31
S6010LS3
S6010FS31
Specific Test Conditions
di/dt — Maximum rate-of-change of on-state current; I
width ³15 µsec with £0.1 µs rise time
dv/dt — Critical rate-of-rise of forward off-state voltage
2
I
t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
and I
— Peak off-state current at V
DRM
RRM
I
— DC gate trigger current V
= 6 V dc; R
GT
D
I
— Peak gate current
GM
I
— DC holding current; initial on-state current = 20 mA
H
I
— Maximum on-state current
T
I
— Peak one-cycle forward surge current
TSM
P
— Average gate power dissipation
G(AV)
P
— Peak gate power dissipation
GM
t
— Gate controlled turn-on time gate pulse = 10 mA; minimum
gt
width = 15 µS with rise time £0.1 µs
t
— Circuit commutated turn-off time
q
V
and V
— Repetitive peak off-state forward and reverse voltage
DRM
RRM
V
— Peak reverse gate voltage
GRM
V
— DC gate trigger voltage; V
= 6 V dc; R
GT
D
V
— Peak on-state voltage
TM
http://www.teccor.com
+1 972-580-7777
Non-isolated
A
A
A
G
A
K
G
K
A
TO-251
TO-252
V-Pak
D-Pak
I
T(RMS)
MAX
S2006VS2
S2006DS2
S4006VS2
S4006DS2
S6006VS2
S6006DS2
S2006VS3
S2006DS3
S4006VS3
S4006DS3
S6006VS3
S6006DS3
S2008VS2
S2008DS2
S4008VS2
S4008DS2
S6008VS2
S6008DS2
S2008VS3
S2008DS3
S4008VS3
S4008DS3
S6008VS3
S6008DS3
S2010VS2
S2010DS2
10
S4010VS2
S4010DS2
10
S6010VS2
S6010DS2
10
S2010VS3
S2010DS3
10
S4010VS3
S4010DS3
10
S6010VS3
S6010DS3
10
General Notes
= 50 mA pulse
Teccor 2N5064 and 2N6565 Series devices conform to all JEDEC
GT
registered data. See specifications table on pages E5 - 2 and
E5 - 3.
The case lead temperature (
dimensional outline drawings in the “Package Dimensions” section
of this catalog.
and V
DRM
RRM
= 100 W
All measurements (except I
L
R
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Operating temperature (T
devices, -65 °C to +125 °C for 2N Series devices, -40 °C to
+125 °C for “TCR” Series, and -40 °C to +110 °C for all others.
Storage temperature range (T
devices, -40 °C to +150 °C for TO-202 and Compak devices, and
-40 °C to +125 °C for all others.
Lead solder temperature is a maximum of +230 °C for 10 seconds
maximum ³1/16" (1.59 mm) from case.
= 100 W
L
E5 - 4
V
&
DRM
I
V
I
T
RRM
GT
(1)
(2) (12)
Amps
Volts
µAmps
I
T(AV)
MAX
MIN
MAX
6
3.8
200
200
6
3.8
400
200
6
3.8
600
200
6
3.8
200
500
6
3.8
400
500
6
3.8
600
500
8
5.1
200
200
8
5.1
400
200
8
5.1
600
200
8
5.1
200
500
8
5.1
400
500
8
5.1
600
500
6.4
200
200
6.4
400
200
6.4
600
200
6.4
200
500
6.4
400
500
6.4
600
500
or T
) is measured as shown on
T
C
L
) are made with an external resistor
GT
= 1 kW unless otherwise noted.
GK
) is -65 °C to +110 °C for EC Series
J
) is -65 °C to +150 °C for TO-92
S
©2002 Teccor Electronics
Thyristor Product Catalog
Data Sheets
I
&
DRM
I
V
RRM
TM
(20) (21)
(3) (10)
µAmps
T
=
T
=
C
C
Volts
25 °C
110 °C
MAX
MAX
MAX
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6
5
250
1.6