MSC1035A Microsemi Corporation, MSC1035A Datasheet
MSC1035A
Manufacturer Part Number
MSC1035A
Description
Low Voltage Drop Schottky Diode
Manufacturer
Microsemi Corporation
Datasheet
1.MSC1035A.pdf
(3 pages)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc 125 C
derating, forward current, Tc 125 C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1 s, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
Maximum Ratings @ 25 C (unless otherwise specified)
Features
Tungsten/Platinum schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, 1N6821) and reverse
polarity (strap-to-cathode: 1N6821R)
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6821R
1N6821
SYMBOL
(MSASC150H45LR)
dI
V
V
I
I
F(ave)
I
T
(MSASC150H45L)
V
RRM
F
FSM
RWM
RRM
T
/dT
stg
JC
R
j
1N6821R
1N6821
Mechanical Outline
ThinKey™3
DROP SCHOTTKY
-55 to +150
-55 to +150
LOW VOLTAGE
MAX.
0.20
0.35
150
750
Datasheet# MSC1035A
45
45
45
4
2
150 Amps
45 Volts
DIODE
Amps/ C
Amps
Amps
UNIT
Volts
Volts
Volts
Amp
C/W
C
C
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