Si9936BDY Vishay Intertechnology, Si9936BDY Datasheet - Page 2

• Manufacturer Part Number: Si9936BDY
• Description: Dual N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Notes
a.
b.
www.vishay.com
2
Si9936BDY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
35
30
25
20
15
10
b
5
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
− Drain-to-Source Voltage (V)
a
a
J
V
2
= 25_C UNLESS OTHERWISE NOTED)
GS
= 10 thru 6 V
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
5 V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
4 V
3 V
New Product
5
V
V
I
D
DS
DS
^ 1 A, V
I
F
V
= 30 V, V
V
V
= 15 V, V
V
V
V
V
DS
= 1.7 A, di/dt = 100 A/ms
V
V
I
DS
DS
Test Condition
GS
S
DS
DD
DD
GS
DS
= 1.7 A, V
= 0 V, V
= V
w 5 V, V
= 4.5 V, I
= 30 V, V
= 15 V, R
= 15 V, R
= 10 V, I
= 15 V, I
GEN
f = 1 MHz
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
D
= 10 V, I
GS
GS
D
D
GS
L
L
= 250 mA
= "20 V
D
= 4.9 A
= 6 A
= 15 W
= 15 W
= 10 V
= 0 V
= 6 A
= 0 V
J
40
35
30
25
20
15
10
G
D
5
0
= 55_C
= 6 W
= 6 A
0
1
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
2
1.0
40
3
0.028
0.041
Typ
0.8
8.6
1.8
1.5
2.8
12
10
15
25
10
20
S-32411—Rev. B, 24-Nov-03
T
C
25_C
Document Number: 72521
= −55_C
4
Max
"100
0.035
0.052
3.0
1.2
13
15
25
40
15
40
1
5
125_C
5
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
6