MSASC25W45KR Microsemi Corporation, MSASC25W45KR Datasheet

MSASC25W45KR

Manufacturer Part Number

MSASC25W45KR

Description

Low Leakage Schottky Diode

Manufacturer

Microsemi Corporation

Datasheet

1.MSASC25W45KR.pdf (2 pages)

Current page: 1 of 2
Download datasheet (78Kb)

Features

Maximum Ratings @ 25 C (unless otherwise specified)

Datasheet# MSC1033A

DESCRIPTION

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc 145 C

derating, forward current, Tc 145 C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1 s, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

Tungsten schottky barrier

Oxide passivated structure for very low leakage currents

Guard ring protection for increased reverse energy capability

Epitaxial structure minimizes forward voltage drop

Hermetically sealed, low profile ceramic surface mount power package

Low package inductance

Very low thermal resistance

Available as standard polarity (strap-to-anode, 1N6816) and reverse

polarity (strap-to-cathode: 1N6816R)

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

1N6816R

1N6816

SYMBOL

F(ave)

RRM

FSM

RWM

RRM

/dT

stg

MSASC25W45KR

MSASC25W45K

SCHOTTKY DIODE

(1N6816R)

Mechanical Outline

ThinKey™ 2

-55 to +175

(1N6816)

LOW LEAKAGE

MAX.

(3.3)

1.25

1.35

125

25 Amps

45 Volts

Amps/ C

Amps

UNIT

Volts

Amp

C/W

Related parts for MSASC25W45KR

Related keywords

MSASC25W45KR datasheet
MSASC25W45KR data sheet
MSASC25W45KR pdf datasheet
MSASC25W45KR component
MSASC25W45KR part
MSASC25W45KR distributor
MSASC25W45KR RoHS
MSASC25W45KR datasheet download