MSASC150W100LR Microsemi Corporation, MSASC150W100LR Datasheet

MSASC150W100LR

Manufacturer Part Number

MSASC150W100LR

Description

Leakage Schottky Diode

Manufacturer

Microsemi Corporation

Datasheet

1.MSASC150W100LR.pdf (2 pages)

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DESCRIPTION

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc 125 C

derating, forward current, Tc 125 C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1 s, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

Maximum Ratings @ 25 C (unless otherwise specified)

Features

Tungsten/Platinum schottky barrier

Oxide passivated structure for very low leakage currents

Guard ring protection for increased reverse energy capability

Epitaxial structure minimizes forward voltage drop

Hermetically sealed, low profile ceramic surface mount power package

Low package inductance

Very low thermal resistance

Available as standard polarity (strap-to-anode, 1N6823) and reverse

polarity (strap-to-cathode: 1N6823R)

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

1N6823R

1N6823

(MSASC150W100LR)

SYMBOL

(MSASC150W100L)

F(ave)

RRM

FSM

RWM

RRM

/dT

stg

1N6823R

1N6823

ceramic

SCHOTTKY DIODE

Mechanical Outline

ThinKey™ 3

-65 to +150

LOW LEAKAGE

MAX.

0.20

0.35

100

150

750

Datasheet# MSC1028A

150 Amps

100 Volts

Low expansion

coef. metal (W or

Mo), Ni plated

Cu/Invar/Cu,

Ni plated

Amps/ C

Amps

UNIT

Volts

Amp

C/W

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