SI7220DN Vishay Intertechnology, SI7220DN Datasheet
SI7220DN
Manufacturer Part Number
SI7220DN
Description
Dual N-channel 60-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7220DN.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7220DN-T1-E3
Manufacturer:
AD
Quantity:
1 944
Part Number:
SI7220DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
c.
Document Number: 73117
S-51128—Rev. B, 13-Jun-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
i
DS
60
60
(V)
J
8
D1
3.30 mm
ti
7
D1
t A bi
0.075 @ V
0.060 @ V
6
r
PowerPAK 1212-8
DS(on)
D2
5
J
J
a
a
Bottom View
= 150_C)
= 150_C)
t
D2
a
a
GS
GS
Parameter
Parameter
(W)
= 4.5 V
= 10 V
Dual N-Channel 60-V (D-S) MOSFET
1
S1
a
a
2
G1
Ordering Information: Si7220DN-T1—E3 (Lead (Pb)-Free)
a
3
b,c
I
S2
D
4.8
4.3
3.30 mm
(A)
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
Q
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
g
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
13
13
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
AS
I
thJA
DS
GS
D
D
AS
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
APPLICATIONS
D Synchronous Rectification
D Primary Side Switch
stg
PowerPAKr Package,
of An SO-8 While Thermally Comparable
10 secs
Typical
G
1
4.8
3.8
2.2
2.6
1.4
4.3
38
77
N-Channel MOSFET
−55 to 150
"20
D
S
260
6.1
60
20
11
1
1
1
/
Steady State
3
Maximum
the Space
Vishay Siliconix
0.69
3.4
2.7
1.1
1.3
5.4
48
94
G
2
N-Channel MOSFET
Si7220DN
www.vishay.com
D
S
2
2
Unit
Unit
_C/W
C/W
mJ
_C
_C
RoHS
W
W
COMPLIANT
V
V
A
A
A
1
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