Si7390DP Vishay Intertechnology, Si7390DP Datasheet
Si7390DP
Manufacturer Part Number
Si7390DP
Description
N-channel 30-V (D-S) Fast Switching WFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7390DP.pdf
(5 pages)
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Notes
a.
Document Number: 72214
S-31728—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
N-Channel 30-V (D-S) Fast Switching WFETt
8
Ordering Information: Si7390DP-T1
6.15 mm
D
J
J
0.0135 @ V
a
a
0.0095 @ V
= 150_C)
= 150_C)
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
PowerPAK SO-8
GS
GS
Bottom View
5
a
a
(W)
= 4.5 V
D
= 10 V
a
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
t v 10 sec
T
T
T
T
A
A
A
A
4
I
= 25_C
= 70_C
= 25_C
= 70_C
New Product
G
D
15
13
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJC
I
I
I
DS
GS
D
D
S
D
D
stg
FEATURES
D Extremely Low Q
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D High-Side DC/DC Conversion
D Point-of-Load Conversion
Low Switching Losses
Package with Low 1.07-mm Profile
- Notebook
- Server
- Workstation
10 secs
Typical
G
4.1
3.2
2.1
15
12
20
53
5
N-Channel MOSFET
g
Tested
-55 to 150
"20
"50
30
D
S
Steady State
gd
Maximum
Vishay Siliconix
WFET Technology for
1.5
1.8
1.1
3.2
25
70
9
7
Si7390DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1
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