Si7404DN Vishay Intertechnology, Si7404DN Datasheet - Page 2

• Manufacturer Part Number: Si7404DN
• Description: N-channel 30-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Si7404DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
40
35
30
25
20
15
10
5
0
0.0
b
Parameter
0.5
V
a
a
V
DS
1.0
GS
Output Characteristics
– Drain-to-Source Voltage (V)
a
= 10 thru 3 V
1.5
a
2.0
2.5
Symbol
V
r
3.0
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
t
SD
t
rr
fs
gs
gd
r
f
g
1, 1.5 V
_
3.5
2.5 V
2 V
_
4.0
New Product
V
V
DS
I
D
DS
^ 1 A, V
= 15 V, V
I
F
V
= 24 V, V
V
V
V
V
V
V
V
V
DS
= 3.2 A, di/dt = 100 A/ms
GS
GS
V
DS
I
DS
DS
Test Condition
S
DS
DD
DD
GS
= 3.2 A, V
= 0 V, V
= 10 V, I
= V
w 5 V, V
= 4.5 V, I
= 15 V, I
= 24 V, V
= 15 V, R
= 15 V, R
= 2.5 V, I
GEN
GS
GS
GS
, I
= 4.5 V, I
= 4.5 V, R
GS
= 0 V, T
D
D
GS
D
D
GS
GS
L
L
= 250 mA
= 13.3 A
D
= "12 V
= 12.4 A
= 13.3 A
= 15 W
= 15 W
= 10 V
= 5 A
= 0 V
= 0 V
J
D
G
= 55_C
40
35
30
25
20
15
10
= 13.3 A
5
0
= 6 W
0.0
0.5
V
GS
Transfer Characteristics
– Gate-to-Source Voltage (V)
Min
0.6
1.0
40
T
25_C
C
= 125_C
1.5
0.0125
0.010
0.019
Typ
0.75
5.8
7.1
50
20
27
39
64
33
45
S-05681—Rev. C, 07-Feb-02
Document Number: 71658
2.0
Max
"100
0.013
0.015
0.022
100
1.2
30
40
60
50
90
–55_C
1
5
2.5
Unit
nC
nA
m
mA
ns
W
V
A
S
V
3.0