Si7409DN Vishay Intertechnology, Si7409DN Datasheet - Page 3

• Manufacturer Part Number: Si7409DN
• Description: P-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72127
S-03372—Rev. A, 03-Mar-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.024
0.018
0.012
0.006
0.000
0.001
0.01
0.1
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
T
Source-Drain Diode Forward Voltage
D
DS
J
= 11 A
0.2
On-Resistance vs. Drain Current
5
5
= 150_C
= 15 V
V
V
GS
SD
Q
g
= 2.5 V
I
- Source-to-Drain Voltage (V)
10
D
10
- Total Gate Charge (nC)
0.4
- Drain Current (A)
Gate Charge
15
15
0.6
T
J
= 25_C
20
20
0.8
V
GS
= 4.5 V
25
25
1.0
30
30
1.2
New Product
4000
3200
2400
1600
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 11 A
5
V
V
1
= 4.5 V
GS
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
C
10
oss
25
Capacitance
2
I
D
= 11 A
Vishay Siliconix
15
50
C
iss
3
75
Si7409DN
20
100
www.vishay.com
4
25
125
150
30
5
3